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MoS 修饰的 CdS 杂化异质结在可见光照射下增强的光电催化性能。

MoS decorated CdS hybrid heterojunction for enhanced photoelectrocatalytic performance under visible light irradiation.

机构信息

School of Chemistry & Environment, South China Normal University, Guangzhou 510006, China.

School of Chemistry & Environment, South China Normal University, Guangzhou 510006, China; Guangdong Provincial Engineering Technology Research Center for Drinking Water Safety, China; Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, China.

出版信息

J Colloid Interface Sci. 2019 Jan 1;533:561-568. doi: 10.1016/j.jcis.2018.08.078. Epub 2018 Aug 30.

Abstract

Pervious photocatalysis application of nanostructured suspensions reveals high recombination rates of photogenerated electron-hole pairs, low recycling efficiency and secondary pollution problems. Herein, MoS@CdS nanocomposites thin films on FTO (fluorine-doped tin oxide) substrates are fabricated using facile electrodeposition by decorating a layer of highly-active MoS cocatalyst on CdS film to optimize the interface modification. The hybrid film exhibits enhanced photoelectrocatalytic activity compared to pristine CdS film. The synthesized CdS exhibits a bandgap of 2.42 eV with the conduct band at ca. -0.25 V vs. RHE, while MoS reveals a bandgap of 1.73 eV with the valance band at ca. 1.59 V vs. RHE. The appropriate band alignment between the hybrid films favours the electrons transfer thus the charge recombination are suppressed. The MoS@CdS film yields a highest photocurrent of 15.2 mA/cm at 0 V vs. Ag/AgCl under visible light illumination (λ ≧ 420 nm), exhibiting a 5.2 times enhancement as compared to that of CdS film (2.9 mA/cm). The structural integration of MoS with CdS will be a promising strategy to develop a high-efficient and low-cost non-noble metal cocatalyst for solar energy conversion.

摘要

在先前的纳米结构悬浮液的光催化应用中,光生电子-空穴对的复合率很高,回收效率低,存在二次污染问题。在此,通过在 CdS 薄膜上修饰一层高活性的 MoS 共催化剂,在 FTO(掺氟氧化锡)基底上制备了 MoS@CdS 纳米复合材料薄膜,以优化界面修饰。与原始的 CdS 薄膜相比,该复合薄膜表现出增强的光电催化活性。合成的 CdS 的带隙为 2.42 eV,导带约为 -0.25 V vs. RHE,而 MoS 的带隙为 1.73 eV,价带约为 1.59 V vs. RHE。杂化薄膜之间适当的能带排列有利于电子转移,从而抑制了电荷复合。在可见光照射下(λ≥420nm),MoS@CdS 薄膜在 0 V vs. Ag/AgCl 下产生的光电流为 15.2 mA/cm,比 CdS 薄膜(2.9 mA/cm)提高了 5.2 倍。MoS 与 CdS 的结构集成将是开发高效、低成本的非贵金属太阳能转化共催化剂的一种很有前途的策略。

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