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界面效应对 CHNHPbCl/ZnO UV 光电探测器性能的影响研究。

Investigation of Interface Effect on the Performance of CHNHPbCl/ZnO UV Photodetectors.

机构信息

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , People's Republic of China.

University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2018 Oct 10;10(40):34744-34750. doi: 10.1021/acsami.8b11722. Epub 2018 Sep 25.

Abstract

Recent investigations indicate that the performance of organic-inorganic perovskite optoelectronic devices can be improved by combining the perovskites and the inorganic materials. However, very few studies have focused on the investigation of perovskites/inorganic semiconductor hybrid UV photodetectors and their detailed performance-enhancement mechanism is still not very clear. In this work, a CHNHPbCl/ZnO UV photodetector has been first demonstrated and investigated. Both the photoresponsivity and response speed of the hybrid device are higher than those of pure CHNHPbCl and ZnO devices. The photoluminescence and transient absorption spectra indicate that the photoinduced electron transfer between CHNHPbCl and ZnO should be responsible for the performance enhancement of the hybrid device. In addition, the high crystal quality of CHNHPbCl on ZnO film is another important reason for the excellent UV detection performance. Our findings in this work provide new insights into the intrinsic photophysics essential for perovskite optoelectronic devices.

摘要

最近的研究表明,通过将钙钛矿与无机材料相结合,可以提高有机-无机钙钛矿光电设备的性能。然而,很少有研究关注钙钛矿/无机半导体混合紫外光探测器的研究,其详细的性能增强机制尚不清楚。在这项工作中,首次演示和研究了 CHNHPbCl/ZnO 紫外光探测器。混合器件的光电响应率和响应速度均高于纯 CHNHPbCl 和 ZnO 器件。光致发光和瞬态吸收光谱表明,CHNHPbCl 和 ZnO 之间的光诱导电子转移应该是混合器件性能增强的原因。此外,CHNHPbCl 在 ZnO 薄膜上的高晶体质量也是其具有优异紫外探测性能的另一个重要原因。我们在这项工作中的发现为钙钛矿光电设备的内在光物理提供了新的见解。

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