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钙钛矿太阳能电池中的复合问题及其解决方法。

Causes and Solutions of Recombination in Perovskite Solar Cells.

机构信息

School of Chemical Engineering, Sungkyunkwan Univeristy (SKKU), Suwon, 440-746, Korea.

出版信息

Adv Mater. 2019 Nov;31(47):e1803019. doi: 10.1002/adma.201803019. Epub 2018 Sep 17.

Abstract

Organic-inorganic hybrid perovskite materials are receiving increasing attention and becoming star materials on account of their unique and intriguing optical and electrical properties, such as high molar extinction coefficient, wide absorption spectrum, low excitonic binding energy, ambipolar carrier transport property, long carrier diffusion length, and high defects tolerance. Although a high power conversion efficiency (PCE) of up to 22.7% is certified for perovskite solar cells (PSCs), it is still far from the theoretical Shockley-Queisser limit efficiency (30.5%). Obviously, trap-assisted nonradiative (also called Shockley-Read-Hall, SRH) recombination in perovskite films and interface recombination should be mainly responsible for the above efficiency distance. Here, recent research advancements in suppressing bulk SRH recombination and interface recombination are systematically investigated. For reducing SRH recombination in the films, engineering perovskite composition, additives, dimensionality, grain orientation, nonstoichiometric approach, precursor solution, and post-treatment are explored. The focus herein is on the recombination at perovskite/electron-transporting material and perovskite/hole-transporting material interfaces in normal or inverted PSCs. Strategies for suppressing bulk and interface recombination are described. Additionally, the effect of trap-assisted nonradiative recombination on hysteresis and stability of PSCs is discussed. Finally, possible solutions and reasonable prospects for suppressing recombination losses are presented.

摘要

有机-无机杂化钙钛矿材料因其独特而有趣的光学和电学性质而受到越来越多的关注,成为研究热点,这些性质包括高摩尔消光系数、宽吸收光谱、低激子束缚能、双极性载流子输运特性、长载流子扩散长度和高缺陷容忍度。尽管钙钛矿太阳能电池(PSC)的功率转换效率(PCE)高达 22.7%,但仍远未达到理论肖克利-奎塞尔极限效率(30.5%)。显然,钙钛矿薄膜中的陷阱辅助非辐射复合(也称为肖克利-里德-霍尔复合,SRH)和界面复合应主要负责上述效率差距。本文系统地研究了抑制体复合和界面复合的最新研究进展。为了降低薄膜中的 SRH 复合,可以通过工程化钙钛矿组成、添加剂、维度、晶粒取向、非化学计量法、前驱体溶液和后处理等方法来实现。本文的重点是在常规或倒置 PSCs 中的钙钛矿/电子传输材料和钙钛矿/空穴传输材料界面处的复合。描述了抑制体复合和界面复合的策略。此外,还讨论了陷阱辅助非辐射复合对 PSCs 滞后和稳定性的影响。最后,提出了抑制复合损耗的可能解决方案和合理展望。

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