Karimi Seyed Asaad, Salehi Iraj, Shykhi Teimor, Zare Samad, Komaki Alireza
Neurophysiology Research Center, Hamadan University of Medical Sciences, Hamadan, Iran; Department of Neuroscience, School of Advanced Technologies in Medicine, Hamadan University of Medical Sciences, Hamadan, Iran.
Department of Biology, Faculty of Science, Urmia University, Urmia, Iran.
Behav Brain Res. 2019 Feb 1;359:630-638. doi: 10.1016/j.bbr.2018.10.002. Epub 2018 Oct 2.
There are many controversies about the safety of extremely low-frequency electromagnetic field (ELF-EMF) on body health and cognitive performance. In the present study, we explored the effects of ELF-EMF on oxidative stress and behaviors of rats. Seventy-two adult male Wistar rats were randomly divided into following groups, control, sham exposure group and the ELF-EMF exposure groups (1 μT, 100 μT, 500 μT, and 2000 μT). After 60 days exposure (2 h/day), elevated plus maze (EPM), Morris water maze (MWM) and Passive avoidance learning (PAL) tasks were used to evaluate the anxiety-like behavior, spatial and passive learning and memory, respectively. Some days after behavioral examination, oxidative stress markers were measured. During spatial reference memory test, animals in ELF-EMF exposure groups (100, and 2000 μT) spent more time in target zone (F (4, 55) = 5.699, P = 0.0007, One-way ANOVA). In PAL retention, the step through latency in the retention test (STLr) in ELF-EMF exposure groups (100,500, and 2000 μT) was significantly greater than control group (F (4, 55) = 29.13, P < 0.0001, One-way ANOVA). In EPM test, ELF-EMF exposure (500 and 2000 μT) decreased the percentage of the entries into the open arms (F (4, 55) = 26.31, P < 0.0001, one-way ANOVA). ELF-EMF exposure (100, and 500 μT) increased Malondialdehyde (MDA) concentration (F (4, 25) = 79.83, P < 0.0001, One-way ANOVA). Our results may allow the conclusion that exposure to ELF-EMFs can improve memory retention (but not acquisition) in the adult male rats. Although exposure to ELF-EMFs could be a factor in the development of anxious state or oxidative stress.
关于极低频电磁场(ELF - EMF)对身体健康和认知能力的安全性存在诸多争议。在本研究中,我们探究了ELF - EMF对大鼠氧化应激和行为的影响。72只成年雄性Wistar大鼠被随机分为以下几组:对照组、假暴露组和ELF - EMF暴露组(1μT、100μT、500μT和2000μT)。在暴露60天(每天2小时)后,使用高架十字迷宫(EPM)、莫里斯水迷宫(MWM)和被动回避学习(PAL)任务分别评估焦虑样行为、空间及被动学习与记忆能力。行为检查后的若干天,测量氧化应激标志物。在空间参考记忆测试中,ELF - EMF暴露组(100μT和2000μT)的动物在目标区域花费的时间更多(F(4, 55) = 5.699,P = 0.0007,单因素方差分析)。在PAL记忆保持测试中,ELF - EMF暴露组(100μT、500μT和2000μT)在记忆保持测试中的穿台潜伏期(STLr)显著长于对照组(F(4, 55) = 29.13,P < 0.0001,单因素方差分析)。在EPM测试中,ELF - EMF暴露(500μT和2000μT)降低了进入开放臂的百分比(F(4, 55) = 26.31,P < 0.0001,单因素方差分析)。ELF - EMF暴露(100μT和500μT)增加了丙二醛(MDA)浓度(F(4, 25) = 79.83,P < 0.0001,单因素方差分析)。我们的结果可能得出这样的结论:暴露于ELF - EMF可改善成年雄性大鼠的记忆保持(但非获取)能力。尽管暴露于ELF - EMF可能是焦虑状态或氧化应激发展的一个因素。
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