Wu Wan-Yang, He Feng
Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China.
Collaborative innovation center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai, 200240, China.
Sci Rep. 2018 Oct 8;8(1):14933. doi: 10.1038/s41598-018-33015-8.
The one-photon ionization and tunneling ionization of H exposed to strong XUV and infrared laser pulses are studied by numerically simulating the four-dimensional time-dependent Schrödinger equation, which includes two-electron dynamics for arbitrary angle between the molecular axis and the laser polarization direction. In the one-photon single ionization of H, one electron escapes fast and the other bound electron is not disturbed but remains in coherent superposition of two electronic states of [Formula: see text]. In another case, under the irradiation of strong infrared laser pulses, one electron tunnels through the laser-dressed Coulomb barrier, and the other bound electron has enough time to adapt to the potential of [Formula: see text] and thus is prone to transfer to the ground electronic state of [Formula: see text]. In the intermediate regime, between the one photon and tunneling regimes, this electron-electron correlation depends strongly on the laser frequency, laser intensity and on the angle between laser polarization and the molecular axis.
通过对包含分子轴与激光偏振方向之间任意角度的双电子动力学的四维含时薛定谔方程进行数值模拟，研究了暴露于强极紫外（XUV）和红外激光脉冲下氢原子的单光子电离和隧穿电离。在氢原子的单光子单电离过程中，一个电子快速逃逸，另一个束缚电子未受干扰，仍处于[公式：见原文]的两个电子态的相干叠加态。在另一种情况下，在强红外激光脉冲照射下，一个电子隧穿穿过激光修饰的库仑势垒，另一个束缚电子有足够的时间适应[公式：见原文]的势，因此易于转移到[公式：见原文]的基电子态。在介于单光子和隧穿区域之间的中间区域，这种电子 - 电子关联强烈依赖于激光频率、激光强度以及激光偏振与分子轴之间的夹角。
