Jiangsu Key Laboratory of Function Control Technology for Advanced Materials, School of Chemical Engineering , Huaihai Institute of Technology , Lianyungang , Jiangsu 222005 , China.
School of Chemistry and Chemical Engineering , Southeast University , Nanjing , Jiangsu 211189 , China.
ACS Appl Mater Interfaces. 2018 Oct 31;10(43):37335-37344. doi: 10.1021/acsami.8b13101. Epub 2018 Oct 18.
Fabrication of highly efficient all thermally activated delayed fluorescence (TADF) white organic light-emitting diodes (WOLEDs) through solution-process still remains a big challenge. Here, two encapsulated TADF molecules with a small singlet-triplet energy gap (Δ E) and high photoluminescence quantum yield (PLQY) were designed and synthesized as yellow emitters for solution-processed WOLEDs. The high current, power, and external quantum efficiencies of 41.6 cd A, 30.4 lm W, and 17.3% were achieved for the solution-processed all-fluorescence WOLEDs with a single-emission layer. In contrast, even with the same Δ E and PLQY, the corresponding unencapsulated parent emitters will account for nearly 50% loss of the potential device efficiency. This is for the first time that the small molecular TADF blue host and TADF yellow guest are used to construct solution-processed all-fluorescence WOLEDs, which exhibit high efficiency comparable with most of the vacuum-deposited all-fluorescence white devices. These results not only demonstrate the great potential of TADF emitters in achieving highly efficient solution-processed WOLEDs, but also testify the key role of molecular encapsulation in reducing polar-exciton quenching and enhancing electroluminescence performance.
通过溶液法制备高效全热激活延迟荧光(TADF)白色有机发光二极管(WOLED)仍然是一个巨大的挑战。在这里,设计并合成了两种封装的 TADF 分子,它们具有较小的单重态-三重态能隙(ΔE)和高光致发光量子产率(PLQY),用作溶液处理 WOLED 的黄色发射器。采用单发射层的溶液处理全荧光 WOLED 实现了 41.6 cd A 的高电流、30.4 lm W 的高光功率和 17.3%的外量子效率。相比之下,即使具有相同的ΔE 和 PLQY,相应的未封装母体发射器也会导致潜在器件效率损失近 50%。这是首次将小分子 TADF 蓝色主体和 TADF 黄色客体用于构建溶液处理全荧光 WOLED,其效率可与大多数真空沉积全荧光白色器件相媲美。这些结果不仅证明了 TADF 发射器在实现高效溶液处理 WOLED 方面的巨大潜力,还证明了分子封装在减少极性激子猝灭和提高电致发光性能方面的关键作用。