ACS Appl Mater Interfaces. 2018 Nov 14;10(45):39238-39244. doi: 10.1021/acsami.8b11998. Epub 2018 Oct 31.
Developing light-harvesting materials with broadband spectral response has constantly been at the forefront of photonics and materials science. The variation in dopants and hosts allows for extension of spectral response, but construction of broadband down-conversion phosphor covering the entire ultra-violet region remains a daunting challenge. Here, we describe a material system in which amorphization and N-doping notably extend the spectral response. We demonstrate that the fabricated nitrided amorphous TiO activated with high concentration of Eu (∼15 mol %) can be excited by X-ray and ultraviolet light (200-400 nm) and present intense visible luminescence. We use hybrid density functional theory to perform structure simulation and clarify that N-anchoring is mediated by coordinately Ti-N bonding between the N lone pairs and the Ti center. Accordingly, the simultaneous structure disordering and nitriding in semiconductors as demonstrated here in TiO:Eu could be extended to other host and dopant systems for applications ranging from spectral modification to X-ray detection.
开发具有宽光谱响应的光收集材料一直是光子学和材料科学的前沿领域。掺杂剂和宿主的变化允许扩展光谱响应,但构建覆盖整个紫外线区域的宽带下转换荧光粉仍然是一个艰巨的挑战。在这里,我们描述了一个材料体系,其中非晶化和 N 掺杂显著扩展了光谱响应。我们证明,用高浓度 Eu(~15mol%)制备的氮化非晶 TiO 可以被 X 射线和紫外光(200-400nm)激发,并呈现出强烈的可见光发射。我们使用杂化密度泛函理论进行结构模拟,并澄清 N 锚定是由 N 孤对电子和 Ti 中心之间的 Ti-N 配位键介导的。因此,这里在 TiO:Eu 中展示的半导体中的同时结构无序和氮化可以扩展到其他宿主和掺杂剂系统,应用范围从光谱修饰到 X 射线检测。