School of Electrical and Electronics Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Korea.
Sensors (Basel). 2018 Oct 17;18(10):3506. doi: 10.3390/s18103506.
In this study, we propose a thermal frequency reconfigurable electromagnetic absorber using germanium telluride (GeTe) phase change material. Thermally-induced phase transition of GeTe from an amorphous high-resistive state to a crystalline low-resistive state by heating is used to change the resonant frequency of the absorber. For full-wave simulation, the electromagnetic properties of GeTe at 25 °C and 250 °C are characterized at 10 GHz under normal incidence for electromagnetic waves. The proposed absorber is designed based on the characterized electromagnetic parameters of GeTe. A circular unit cell is designed and GeTe is placed at a gap in the circle to maximize the switching range. The performance of the proposed electromagnetic absorber is numerically and experimentally demonstrated. Measurement results indicate that the absorption frequency changes from 10.23 GHz to 9.6 GHz when the GeTe film is altered from an amorphous state at room temperature to a crystalline state by heating the sample to 250 °C. The absorptivity in these states is determined to be 91% and 92%, respectively.
在这项研究中,我们提出了一种使用碲化锗(GeTe)相变材料的热频率可重构电磁吸收体。通过加热使 GeTe 从非晶高阻态到晶态的热诱导相转变用于改变吸收体的共振频率。为了进行全波仿真,在垂直入射电磁波的情况下,在 10GHz 下对 25°C 和 250°C 下的 GeTe 的电磁特性进行了表征。基于 GeTe 的特征电磁参数设计了所提出的吸收体。设计了一个圆形单元,并在圆内的间隙中放置 GeTe,以最大化开关范围。所提出的电磁吸收体的性能通过数值和实验进行了验证。测量结果表明,当将样品加热到 250°C 时,GeTe 薄膜从室温下的非晶态转变为晶态,吸收频率从 10.23GHz 变为 9.6GHz。在这些状态下的吸收率分别确定为 91%和 92%。