Patel S G, Johnston M D, Webb T J, Bennett N L, Welch D R, Gilgenbach R M, Cuneo M E, Kiefer M L, Leckbee J J, Mazarakis M G, Muron D J, Renk T J, Simpson S C, Doron R, Biswas S, Mikitchuk D, Maron Y
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
University of Michigan, Ann Arbor, Michigan 48109, USA.
Rev Sci Instrum. 2018 Oct;89(10):10D123. doi: 10.1063/1.5039386.
In the self-magnetic-pinch diode, the electron beam, produced through explosive field emission, focuses on the anode surface due to its own magnetic field. This process results in dense plasma formation on the anode surface, consisting primarily of hydrocarbons. Direct measurements of the beam's current profile are necessary in order to understand the pinch dynamics and to determine x-ray source sizes, which should be minimized in radiographic applications. In this paper, the analysis of the C IV doublet (580.1 and 581.2 nm) line shapes will be discussed. The technique yields estimates of the electron density and electron temperature profiles, and the method can be highly beneficial in providing the current density distribution in such diodes.
在自磁箍缩二极管中，通过爆炸场发射产生的电子束因其自身磁场而聚焦在阳极表面。这一过程导致在阳极表面形成主要由碳氢化合物组成的密集等离子体。为了理解箍缩动力学并确定X射线源尺寸（在射线照相应用中应将其最小化），直接测量束流的电流分布是必要的。本文将讨论对C IV双线（580.1和581.2纳米）线形的分析。该技术可得出电子密度和电子温度分布的估计值，并且该方法在提供此类二极管中的电流密度分布方面可能非常有用。
