Phthalocyanine Photoregeneration for Low Power Consumption Chemiresistors.

It is well-known that the applicability of phthalocyanine chemiresistors suffers from long recovery time after NO exposure. This circumstance enforces the necessity to operate the sensors at elevated temperatures (150-200 °C), which shortens the sensor lifetime and increases its power consumption (regardless, a typical measurement period is longer than 15 min). In this paper, we propose a new method for fast and effective recovery by UV-vis illumination at a low temperature (55 °C). The method is based on short illumination following short NO exposure. To support and optimize the method, we investigated the effects of light in the wavelength and intensity ranges of 375-850 nm and 0.2-0.8 mW/mm, respectively, on the rate of NO desorption from the phthalocyanine sensitive layer during the recovery period. This investigation was carried out for a set of phthalocyanine materials (ZnPc, CuPc, HPc, PbPc, and FePc) operating at slightly elevated temperatures (55-100 °C) and was further supported by the analysis of UV-vis and FTIR spectral changes. We found out that the light with the wavelength shorter than 550 nm significantly accelerates the NO desorption from ZnPc, CuPc, and FePc, and allows bringing the measurement period under 2 min and decreasing the sensor power consumption by 75%. Possible mechanisms of the light-stimulated desorption are discussed.