School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
Phys Chem Chem Phys. 2018 Nov 28;20(46):29440-29445. doi: 10.1039/c8cp05595e.
Fully spin-polarized current and negative differential resistance (NDR) are two important electronic transport properties for spintronic nanodevices based on two-dimensional materials. Here, we describe both the electric and optical tuning of the spin-polarized electronic transport properties of the indium triphosphide (InP3) monolayer, which is doped with Ge atoms, by using quantum transport calculations. The spin degeneration of the InP3 monolayer is lifted due to the doping of Ge atoms. By applying a small bias voltage, a fully spin-polarized current can be obtained along both the armchair and zigzag directions. Moreover, a remarkable NDR is observed for the current along the zigzag direction, which shows a huge peak-to-valley ratio of 3.1 × 103, while in the armchair direction, a lower peak-to-valley ratio of 5.5 is obtained. Alternatively, a fully spin-polarized photocurrent can also be generated under the illumination of linearly-polarized light by tuning either the photon energy or the polarization angle.
完全自旋极化电流和负微分电阻（NDR）是基于二维材料的自旋电子纳米器件的两个重要电子输运性质。在这里，我们通过量子输运计算描述了掺杂 Ge 原子的磷化铟（InP3）单层的自旋极化电子输运性质的电和光调谐。由于 Ge 原子的掺杂，InP3 单层的自旋简并被消除。通过施加小的偏置电压，可以在扶手椅和锯齿方向上获得完全自旋极化的电流。此外，对于沿锯齿方向的电流，观察到显著的 NDR，其峰谷比高达 3.1×103，而在扶手椅方向上，获得的峰谷比为 5.5。或者，通过调节光子能量或偏振角，在线性偏振光的照射下也可以产生完全自旋极化的光电流。
