Baek Nam-Hoon, Choi Woon-Seop
School of Display Engineering, Hoseo University, Asan, Chungnam, 31499, Korea.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1420-1424. doi: 10.1166/jnn.2019.16221.
Colloidal quantum-dot based light-emitting diodes (QD-LEDs) are attractive for use in display devices because of the remarkable electrical and optical characteristics of colloidal quantum dots. An inverted structure may be one method to achieve the necessary multilayer device structures in QD-LEDs. In this study, each layer of an inverted-structure QD-LED was optimized. The effect of the solvent on the hole transfer layer was investigated, along with the effect of the concentration of the electron transfer layer, the effect of the co-solvent on the hole transfer layer, and the effect of the concentration and solvent of quantum dot layer. The quantum dots and ZnO NPs were synthesized as the emitting layer and carrier transporting layer using a solution-mediated process. The inverted QD-LED device showed a luminance of 3,762 cd/m², current efficiency of 1.86 cd/A, and EQE of 1.18%.
基于胶体量子点的发光二极管（QD-LED）因其胶体量子点卓越的电学和光学特性而在显示设备中颇具吸引力。倒置结构可能是实现QD-LED中必要多层器件结构的一种方法。在本研究中，对倒置结构QD-LED的每一层进行了优化。研究了溶剂对空穴传输层的影响，以及电子传输层浓度的影响、共溶剂对空穴传输层的影响，还有量子点层浓度和溶剂对其的影响。使用溶液介导法合成了量子点和ZnO纳米颗粒作为发光层和载流子传输层。倒置QD-LED器件的亮度为3762 cd/m²，电流效率为1.86 cd/A，外量子效率为1.18%。
