Suppr超能文献

基于三硅-氧化铟锡波导定向耦合器的可重构三维模式(解)复用器/开关

Reconfigurable three-dimensional mode (de)multiplexer/switch via triple-silicon-ITO-waveguide directional coupler.

作者信息

Jiang Weifeng

出版信息

Opt Express. 2018 Oct 1;26(20):26257-26271. doi: 10.1364/OE.26.026257.

Abstract

A reconfigurable mode (de)multiplexer/switch (RMDS) is a pivotal component for the mode routing in mode-division multiplexing (MDM) networks. Here, we propose a three-dimensional (3D) RMDS via a triple-waveguide directional coupler, consisting of a lower doped silicon waveguide, a central plasmonic horizontal-slot waveguide with indium-tin-oxide (ITO) and an upper doped polycrystalline-silicon waveguide. The enhanced light-matter-interactions can be achieved via the central plasmonic metal-oxide-semiconductor (MOS) mode. The multiplexing states of the proposed 3D-RMDS can be switched by adjusting the applied voltage bias on the ITO layer. The simulation results reveal that a 3D quasi-TM and quasi-TM RMDS is with a compact length of 8.429 μm, the mode crosstalk of -20.3 dB (-9.2 dB) and the insertion loss of 0.06 dB (1.47dB) at the wavelength of 1550 nm for the "OFF" ("ON") state, respectively. The proposed 3D-RMDS can be applied in future 3D on-chip MDM networks to achieve a flexible mode-routing and further enhance the transmission capacity.

摘要

可重构模式(解)复用器/开关(RMDS)是模式分割复用(MDM)网络中模式路由的关键组件。在此,我们通过三波导定向耦合器提出一种三维(3D)RMDS,它由一个低掺杂硅波导、一个带有氧化铟锡(ITO)的中央等离子体水平槽波导和一个上掺杂多晶硅波导组成。通过中央等离子体金属氧化物半导体(MOS)模式可以实现增强的光与物质相互作用。所提出的3D-RMDS的复用状态可以通过调整ITO层上施加的电压偏置来切换。仿真结果表明,一个3D准横磁(TM)和准横磁RMDS在1550nm波长下,“关”(“开”)状态时的紧凑长度为8.429μm,模式串扰分别为-20.3dB(-9.2dB)和插入损耗为0.06dB(1.47dB)。所提出的3D-RMDS可应用于未来的3D片上MDM网络,以实现灵活的模式路由并进一步提高传输容量。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验