Study of Hydrogen Plasma Treatment on InGaZnO with Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition.

In the past few years, thin film transistors have a wide range of applications on display technology, material selection and quality for its active layer is critical for device performance. Traditional amorphous silicon (a-Si) silicon has a lot of advantages such as good productivity, short process and low-cost. It also has a lot of shortcomings on these applications on TFTs such as photosensitivity, light degradation, and opacity, etc. The dispute of the material based on a-Si:H as an active layer in TFT is low field effect mobility (1 cm²/V·S) (M. Shur and M. Hack, 55, 3831 (1984)), photo sensitivity (low band gap about 1.7 V) and high deposition temperature (400 °C) (M. Shur, et al., 66, 3371 (1989); K. Khakzar and E. H. Lueder, 39, 1438 (1992)). Amorphous In-Ga-Zn-O (IGZO) had attracted attention that compared with the conventional a-Si:H, due to its good properties of simultaneously high/low conductivity with high visual transparency via doping level. Oxide-based semiconductors, such as ZnO (G. Adamopoulos, et al., 95, 133507-3 (2009); H.-C. Cheng, et al., 90, 012113-3 (2007)) and IGZO (C. J. Chiu, et al., 31, 1245 (2010); L. Linfeng and P. Junbiao, 58, 1452 (2011)) have been reported for the active channel layer. These oxide-based materials offer good electrical properties and high transparency for thin film transistors, its high transmittance can be applied to fabricate the full transparent TFT on flexible substrate. With hydrogen plasma treatment on a-IGZO produced by atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD), the material characteristics of a-IGZO is studied.