Fang Zhishan, He Haiping, Gan Lu, Li Jing, Ye Zhizhen
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China.
Adv Sci (Weinh). 2018 Oct 23;5(12):1800736. doi: 10.1002/advs.201800736. eCollection 2018 Dec.
Adding alkali metal into lead halide perovskites has recently been demonstrated as an effective strategy for reducing nonradiative loss. However, the suggested role of the alkali metal is usually limited to surface passivation, and the semiconductor doping effect is rarely discussed. Here, the mechanism of lithium doping in the photocarrier recombination in solution-processed methylammonium lead halide films is investigated by photoluminescence and photoelectron spectroscopies. It is demonstrated that lithium doping weakens the electron-phonon coupling and acts as donor in perovskites, which provide solid evidence that lithium enters the lattice rather than just in the surface region. The n-type doping creates free electrons to fill the trap states in both the bulk and surface regions, leading to suppressed trapping of photocarriers and reduces nonradiative recombination.
最近已证明,在卤化铅钙钛矿中添加碱金属是减少非辐射损失的有效策略。然而,碱金属的作用通常仅限于表面钝化,很少讨论半导体掺杂效应。在此,通过光致发光和光电子能谱研究了溶液法制备的甲基铵卤化铅薄膜中锂掺杂对光载流子复合的影响机制。结果表明,锂掺杂减弱了电子-声子耦合,并在钙钛矿中作为施主,这提供了锂进入晶格而非仅在表面区域的有力证据。n型掺杂产生自由电子以填充体相和表面区域中的陷阱态,从而抑制光载流子的俘获并减少非辐射复合。