Zhou Yunan, Zhuang Weidong, Hu Yunsheng, Liu Ronghui, Xu Huibing, Chen Mingyue, Liu Yuanhong, Li Yanfeng, Zheng Yaling, Chen Guantong
National Engineering Research Center for Rare Earth Materials , General Research Institute for Nonferrous Metals, and Grirem Advanced Materials Co., Ltd. , Beijing 100088 , People's Republic of China.
Inorg Chem. 2019 Jan 22;58(2):1492-1500. doi: 10.1021/acs.inorgchem.8b03017. Epub 2018 Dec 31.
High-quality white light-emitting diodes (w-LEDs) are mainly determined by conversion phosphors and the enhancement of cyan component that dominates the high color rendering index. New phosphors (LuM)(AlSi)O:Ce (M = Mg, Ca, Sr and Ba), showing a cyan-green emission, have been achieved via the co-substitution of Lu-Al by M-Si pair in LuAlO:Ce to compensate for the lack of cyan region and avoid using multiple phosphors. The excitation bands of (LuM)(AlSi)O:Ce (M = Mg, Ca, Sr and Ba) show a red-shift from 434 to 445 nm which is attributed to the larger centroid shift and crystal field splitting. The enhanced structural rigidity associated with the accommodation of larger M leads to a decreasing Stokes shift and the corresponding blue-shift (533 → 511 nm) in emission spectra, along with an improvement in thermal stability (keeping ∼93% at 150 °C). The cyan-green phosphor LuBaAlSiO:Ce enables to fabricate a superhigh color rendering w-LED ( R = 96.6), verifying its superiority and application prospect in high-quality solid-state lightings.
高质量的白色发光二极管(w-LED)主要由转换磷光体和主导高显色指数的青色成分增强所决定。通过在LuAlO:Ce中用M-Si对共取代Lu-Al,已获得了呈现青绿色发射的新型磷光体(LuM)(AlSi)O:Ce(M = Mg、Ca、Sr和Ba),以弥补青色区域的不足并避免使用多种磷光体。(LuM)(AlSi)O:Ce(M = Mg、Ca、Sr和Ba)的激发带显示出从434到445 nm的红移,这归因于更大的质心位移和晶体场分裂。与容纳更大的M相关的增强结构刚性导致斯托克斯位移减小以及发射光谱中相应的蓝移(533→511 nm),同时热稳定性提高(在150°C下保持约93%)。青绿色磷光体LuBaAlSiO:Ce能够制造出超高显色性的w-LED(R = 96.6),验证了其在高质量固态照明中的优越性和应用前景。