Jones Leighton O, Mosquera Martín A, Fu Bo, Schatz George C, Ratner Mark A, Marks Tobin J
Department of Chemistry and the Materials Research Center , Northwestern University , Evanston , Illinois 60208 , United States.
J Am Chem Soc. 2019 Jan 30;141(4):1672-1684. doi: 10.1021/jacs.8b11259. Epub 2019 Jan 16.
Carbon- and silicon-based n-type materials tend to suffer from instability of the corresponding radical anions. With DFT calculations, we explore a promising route to overcome such challenges with molecular nanocages which utilize the heavier element Ge. The addition of fluorine substituents creates large electron affinities in the range 2.5-5.5 eV and HOMO-LUMO gaps between 1.6 and 3.2 eV. The LUMOs envelop the surfaces of these structures, suggesting extensive delocalization of injected electrons, analogous to fullerene acceptors. Moreover, these Ge F inorganic cages are found to be transparent in the UV-visible region as probed with their excited states. Their capacitance, linear polarizabilities, and dielectric constants are computed and found to be on the same order of magnitude as saturated oligomers and some extended π-organics (azobenzenes). Furthermore, we explore fullerene-type endohedral isomers, i.e., cages with internal substituents or guest atoms, and find them to be more stable than the parent exohedral isomers by up to -206.45 kcal mol. We also consider the addition of Li, He, Cs, and Bi, to probe the utility of the exo/ endo cages as host-guest systems. The endohedral He/Li@F@GeF cages are significantly more stable than their parent exohedral isomers He/Li@GeF by -182.46 and -49.22 kcal mol, respectively. The energy of formation of endohedral He@F@GeF is exothermic by -10.4 kcal mol, while Cs and Bi guests are too large to be accommodated but are stable in the exohedral parent cages. Conceivable applications of these materials include n-type semiconductors and transparent electrodes, with potential for novel energy storage modalities.
基于碳和硅的n型材料往往会受到相应自由基阴离子不稳定性的影响。通过密度泛函理论(DFT)计算,我们探索了一条利用较重元素锗的分子纳米笼来克服此类挑战的可行途径。氟取代基的加入产生了2.5 - 5.5电子伏特范围内的大电子亲和能以及1.6至3.2电子伏特之间的最高占据分子轨道(HOMO)-最低未占分子轨道(LUMO)能隙。LUMO围绕着这些结构的表面,表明注入电子的广泛离域,类似于富勒烯受体。此外,这些锗氟无机笼在紫外 - 可见光区域被其激发态探测时是透明的。计算了它们的电容、线性极化率和介电常数,发现其与饱和低聚物和一些扩展的π有机化合物(偶氮苯)处于同一数量级。此外,我们探索了富勒烯型内包式异构体,即带有内部取代基或客体原子的笼,发现它们比母体外表面异构体稳定高达 - 206.45千卡/摩尔。我们还考虑添加锂、氦、铯和铋,以探究外/内笼作为主客体系统的效用。内包氦/锂@F@GeF笼分别比其母体外表面异构体氦/锂@GeF稳定 - 182.46和 - 49.22千卡/摩尔。内包氦@F@GeF的形成能放热 - 10.4千卡/摩尔,而铯和铋客体太大无法容纳,但在母体外表面笼中是稳定的。这些材料可设想的应用包括n型半导体和透明电极,具有新型能量存储方式的潜力。