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等离子体增强的热载流子诱导二维 GaAs 半导体量子阱中光发射的调制。

Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well.

机构信息

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China.

Department of Physics, University of North Texas, Denton, Texas 76203, USA.

出版信息

Nanoscale. 2019 Mar 7;11(9):3827-3836. doi: 10.1039/c8nr07489e. Epub 2019 Jan 11.

DOI:10.1039/c8nr07489e
PMID:30633286
Abstract

A hot-electron-enabled route to controlling light with dissipative loss compensation in semiconductor quantum light emitters has been realized for tunable quantum optoelectronic devices via a two-species plasmon system. The dual species nano-plasmonic system is achieved by combining UV-plasmonic gallium metal nanoparticles (GaNPs) with visible-plasmonic gold metal nanoparticles (AuNPs) on a near-infrared two-dimensional GaAs/AlGaAs quantum well emitter. It has been demonstrated that while hot carrier-powered charge-transfer processes can result in semiconductor doping and increased optical absorption, photo-generated carrier density in the quantum well can also be modulated by off-resonant plasmonic interaction without thermal dissipation. Merging these essential emitter-friendly optical characteristics in the two-species plasmon system, we effectively modulate the frequency of the emitted light. The wavelength of the emitted light is tuned by the plasmonically powered hot electron process induced by the AuNPs with a 10-fold emission enhancement induced by the GaNPs. The additional plasmonic element provides functionality to achieving an active plasmonic light emitter that is otherwise far from reach with conventional single plasmonic material-based semiconductors.

摘要

通过双等离子体系统,在半导体量子光源中实现了一种利用耗散损耗补偿的热电子控制光的方法,从而为可调谐量子光电设备开辟了道路。双等离子体纳米系统是通过将紫外等离子体的氮化镓纳米颗粒(GaNPs)与近红外二维砷化镓/砷化铝镓量子阱发射器上的可见等离子体金纳米颗粒(AuNPs)相结合而实现的。实验证明,虽然热载流子驱动的电荷转移过程会导致半导体掺杂和光吸收增加,但量子阱中的光生载流子密度也可以通过非共振等离子体相互作用进行调制,而不会发生热耗散。在双等离子体系统中融合这些基本的对发射器友好的光学特性,我们可以有效地调制发射光的频率。通过 AuNPs 进行的等离子体供电的热电子过程来调谐发射光的波长,GaNPs 可将发射增强 10 倍。额外的等离子体元件提供了一种功能,实现了有源等离子体发光体,而这在传统的基于单一等离子体材料的半导体中是遥不可及的。

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