Wang Mengxia, Zhang Fang, Wang Zhengping, Xu Xinguang
State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China.
School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255000, China.
Materials (Basel). 2019 Jan 9;12(2):201. doi: 10.3390/ma12020201.
As a newly-developed two-dimensional (2D) material of group-IVA, few-layer silicon (Si) nanosheets were prepared by the liquid phase exfoliation (LPE) method. Its non-linear saturable adsorption property was investigated by 532 and 1064 nm nanosecond lasers. Using Si nanosheets as the saturable absorber (SA), passive Q-switched all-solid-state lasers were demonstrated for the first time. For different laser emissions of Nd at 0.9, 1.06, and 1.34 µm, the narrowest Q-switched pulse widths were 200.2, 103.7, and 110.4 ns, corresponding to the highest peak powers of 2.76, 2.15, and 1.26 W. The results provide a promising SA for solid-state pulsed lasers and broaden the potential application range of Si nanosheets in ultrafast photonics and optoelectronics.
作为一种新开发的IVA族二维（2D）材料，通过液相剥离（LPE）法制备了少层硅（Si）纳米片。利用532和1064nm纳秒激光研究了其非线性饱和吸收特性。首次以Si纳米片作为饱和吸收体（SA），演示了被动调Q全固态激光器。对于Nd在0.9、1.06和1.34μm处的不同激光发射，最窄的调Q脉冲宽度分别为200.2、103.7和110.4ns，对应的最高峰值功率分别为2.76、2.15和1.26W。这些结果为固态脉冲激光器提供了一种有前景的SA，并拓宽了Si纳米片在超快光子学和光电子学中的潜在应用范围。
