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弹弓非序列双电离作为关联双电子逃逸的门。

Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape.

机构信息

Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom.

Department of Physics, Ludwig-Maximilians-Universität Munich, Am Coulombwall 1, D-85748 Garching, Germany and Max Planck Institute of Quantum Optics, Hans-Kopfermann-Strasse 1, D-85748 Garching, Germany.

出版信息

Phys Rev Lett. 2018 Dec 28;121(26):263203. doi: 10.1103/PhysRevLett.121.263203.

DOI:10.1103/PhysRevLett.121.263203
PMID:30636162
Abstract

At intensities below the recollision threshold, we show that recollision-induced excitation with one electron escaping fast after recollision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of nonsequential double ionization (NSDI), for strongly driven He at 400 nm. Slingshot NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anticorrelated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anticorrelated two-electron escape obtained in previous studies.

摘要

在低于再碰撞阈值的强度下,我们表明,再碰撞后一个电子快速逃逸,另一个电子通过库仑弹弓运动延迟逃逸的再碰撞诱导激发是非顺序双电离(NSDI)的最重要机制之一,这对于在 400nm 处强烈驱动的氦气而言。弹弓 NSDI 是一种普遍存在的机制,适用于广泛的低强度和脉冲持续时间。两个电子逃逸的反相关是其显著的特征。该机制提供了对以前研究中获得的两个电子逃逸反相关的另一种解释。

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引用本文的文献

1
Fingerprints of slingshot non-sequential double ionization on two-electron probability distributions.双电子概率分布上弹弓非顺序双电离的指纹图谱。
Sci Rep. 2019 Dec 11;9(1):18855. doi: 10.1038/s41598-019-55066-1.