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有源射频调制下耦合腔太赫兹半导体激光器的边带产生

Sideband generation of coupled-cavity terahertz semiconductor lasers under active radio frequency modulation.

作者信息

Li Ziping, Li Hua, Wan Wenjian, Zhou Kang, Cao Juncheng, Chang Gaolei, Xu Gangyi

出版信息

Opt Express. 2018 Dec 10;26(25):32675-32690. doi: 10.1364/OE.26.032675.

Abstract

The radio frequency (RF) modulation is a powerful tool, which is used for generating sidebands in semiconductor lasers for active mode-locking. The two-section coupled-cavity laser geometry shows advantages over traditional Fabry-Pérot cavities in the RF modulation efficiency, because of its reduced device capacitance of short section cavity. Further, it has been widely used for active/passive mode-locking of semiconductor diode lasers. For semiconductor-based quantum cascade lasers (QCLs) emitting in the far-infrared or terahertz frequency bands, the two-section coupled-cavity configuration can strongly prevent the laser from multimode emissions. This is because of its strong mode selection (loss modulation), which the cavity geometry introduces. Here, we experimentally demonstrate that the coupled-cavity terahertz QCL can be actively modulated to generate sidebands. The RF modulation is efficient at the frequency that equals the difference frequency between the fundamental and higher order transverse modes of the laser, and its harmonics. We show for the first time that, when the laser is modulated at the second harmonic of the difference frequency, the sideband generation in coupled-cavity terahertz QCLs and the generated sidebands are equally spaced by the injected microwave frequency. Our results, which are presented here, provide a novel approach for modulating terahertz coupled-cavity lasers for active mode-locking. The coupled-cavity geometry shows advantages in generating dense modes with short cavities for potential high-resolution spectroscopy. Furthermore, the short coupled-cavity laser consumes less electrical power than Fabry-Pérot lasers that generate a similar mode spacing.

摘要

射频(RF)调制是一种强大的工具,用于在半导体激光器中产生边带来实现主动锁模。两段耦合腔激光器结构在射频调制效率方面比传统的法布里 - 珀罗腔具有优势,这是因为其短段腔的器件电容减小。此外,它已被广泛用于半导体二极管激光器的主动/被动锁模。对于在远红外或太赫兹频段发射的基于半导体的量子级联激光器(QCL),两段耦合腔结构可以强烈地防止激光器产生多模发射。这是由于其腔结构引入的强模式选择(损耗调制)。在这里,我们通过实验证明耦合腔太赫兹QCL可以被主动调制以产生边带。射频调制在等于激光器基模和高阶横向模之间的差频及其谐波的频率处是有效的。我们首次表明,当激光器在差频的二次谐波处进行调制时,耦合腔太赫兹QCL中的边带产生以及所产生的边带以注入的微波频率等间隔分布。我们在此展示的结果为调制太赫兹耦合腔激光器以实现主动锁模提供了一种新方法。耦合腔结构在利用短腔产生密集模式以用于潜在的高分辨率光谱学方面具有优势。此外,短耦合腔激光器比产生类似模式间隔的法布里 - 珀罗激光器消耗的电功率更少。

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