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压力下的竞争:氮化硅磷酰亚胺SiP N NH中常压 motif 与紧密堆积的共存

Rivalry under Pressure: The Coexistence of Ambient-Pressure Motifs and Close-Packing in Silicon Phosphorus Nitride Imide SiP N NH.

作者信息

Vogel Sebastian, Buda Amalina T, Schnick Wolfgang

机构信息

Department of Chemistry, University of Munich (LMU), Butenandtstraße 5-13, 81377, Munich, Germany.

出版信息

Angew Chem Int Ed Engl. 2019 Mar 11;58(11):3398-3401. doi: 10.1002/anie.201813789. Epub 2019 Jan 30.

Abstract

Non-metal nitrides such as BN, Si N , and P N meet numerous demands on high-performance materials, and their high-pressure polymorphs exhibit outstanding mechanical properties. Herein, we present the silicon phosphorus nitride imide SiP N NH featuring sixfold coordinated Si. Using the multi-anvil technique, SiP N NH was obtained by high-pressure high-temperature synthesis at 8 GPa and 1100 °C with in situ formed HCl acting as a mineralizer. Its structure was elucidated by a combination of single-crystal X-ray diffraction and solid-state NMR measurements. Moreover, SiP N NH was characterized by energy-dispersive X-ray spectroscopy and (temperature-dependent) powder X-ray diffraction. The highly condensed Si/P/N framework features PN tetrahedra as well as the rare motif of SiN octahedra, and is discussed in the context of ambient-pressure motifs competing with close-packing of nitride anions, representing a missing link in the high-pressure chemistry of non-metal nitrides.

摘要

诸如氮化硼(BN)、氮化硅(Si₃N₄)和氮化磷(P₃N₅)等非金属氮化物满足了对高性能材料的众多需求,并且它们的高压多晶型物展现出卓越的机械性能。在此,我们展示了具有六配位硅的硅磷氮亚胺(SiP₃N₃NH)。利用多砧技术,通过在8吉帕和1100℃下的高温高压合成,并以原位形成的HCl作为矿化剂,获得了SiP₃N₃NH。其结构通过单晶X射线衍射和固态核磁共振测量相结合的方法得以阐明。此外,SiP₃N₃NH通过能量色散X射线光谱和(温度相关的)粉末X射线衍射进行了表征。高度缩合的Si/P/N骨架具有PN四面体以及罕见的SiN八面体结构单元,并在与氮化物阴离子紧密堆积竞争的常压结构单元的背景下进行了讨论,代表了非金属氮化物高压化学中缺失的一环。

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