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一种基于银纳米线和磁性纳米粒子-聚二甲基硅氧烷的柔性磁场传感器。

A Flexible Magnetic Field Sensor Based on AgNWs & MNs-PDMS.

作者信息

Zhang Qiang, Du Yi, Sun Youyi, Zhuo Kai, Ji Jianlong, Yuan Zhongyun, Zhang Wendong, Sang Shengbo

机构信息

MicroNano System Research Center, Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education and Shanxi Province & College of Information Engineering, Taiyuan University of Technology, Taiyuan, 030024, People's Republic of China.

Technology of Polymeric Composites of Shanxi Province, North University of China, Taiyuan, 030051, People's Republic of China.

出版信息

Nanoscale Res Lett. 2019 Jan 17;14(1):27. doi: 10.1186/s11671-018-2826-5.

Abstract

This paper presents a new flexible magnetic field sensor based on Ag nanowires and magnetic nanoparticles doped in polydimethylsiloxane (AgNWs & MNs-PDMS) with sandwich structure. The MNs act as the sensitive unit for magnetic field sensing in this work. Besides, the conductive networks are made by AgNWs during deformation. Magnetostriction leads to the resistance change of the AgNWs & MNs-PDMS sensors. Furthermore, the MNs increase the conductive paths for electrons, leading to lower initial resistance and higher sensitivity of the resulting sensor during deformation. A point worth emphasizing is that the interaction of the AgNWs and MNs plays irreplaceable role in magnetic field sensing, so the resistance change during stretching and shrinking was investigated. The flexible magnetic field sensor based on the mass ratio of MNs and AgNWs is 1:5 showed the highest sensitivity of 24.14 Ω/T in magnetic field sensing experiment. Finally, the magnetostrictive and piezoresistive sensing model were established to explore the mechanism of the sensor.

摘要

本文提出了一种新型的基于银纳米线和掺杂在聚二甲基硅氧烷中的磁性纳米颗粒(AgNWs&MNs-PDMS)的三明治结构柔性磁场传感器。在这项工作中,磁性纳米颗粒充当磁场传感的敏感单元。此外,在变形过程中,银纳米线形成导电网络。磁致伸缩导致AgNWs&MNs-PDMS传感器的电阻变化。此外,磁性纳米颗粒增加了电子的导电路径,导致所得传感器在变形过程中的初始电阻更低且灵敏度更高。值得强调的一点是,银纳米线和磁性纳米颗粒的相互作用在磁场传感中起着不可替代的作用,因此研究了拉伸和收缩过程中的电阻变化。在磁场传感实验中,基于磁性纳米颗粒与银纳米线质量比为1:5的柔性磁场传感器显示出最高灵敏度,为24.14Ω/T。最后,建立了磁致伸缩和压阻传感模型以探究该传感器的机理。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc8a/6336596/80852ae6cb18/11671_2018_2826_Fig1_HTML.jpg

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