非晶态和部分晶态氧化镓中的氧扩散。

Oxygen diffusion in amorphous and partially crystalline gallium oxide.

机构信息

Institute of Physical Chemistry, RWTH Aachen University, Landoltweg 2, 52074 Aachen, Germany.

出版信息

Phys Chem Chem Phys. 2019 Feb 20;21(8):4268-4275. doi: 10.1039/c8cp06439c.

Abstract

Oxygen transport in amorphous (a-GaO1.5) and partially crystalline (a/c-GaO1.5) gallium oxide was studied by means of 18O/16O isotope exchange experiments and time-of-flight secondary ion mass spectrometry (ToF-SIMS). Thin films of a-GaO1.5 were deposited by pulsed laser deposition (PLD) on alumina substrates at room temperature in an oxygen atmosphere. Oxygen tracer diffusion coefficients D* and oxygen surface exchange coefficients k* were determined as a function of temperature, 300 ≤ T/°C ≤ 370, and as a function of oxygen partial pressure, 2 ≤ p(O2)/mbar ≤ 500 at a temperature of T = 330 °C. The activation energy of oxygen tracer diffusion in amorphous gallium oxide was found to be EA = 0.8 eV. In addition, the time-temperature-transformation (TTT) diagram of crystallisation of amorphous gallium oxide was determined.

摘要

通过 18O/16O 同位素交换实验和飞行时间二次离子质谱 (ToF-SIMS)，研究了非晶态(a-GaO1.5)和部分晶态(a/c-GaO1.5)氧化镓中的氧传输。通过脉冲激光沉积 (PLD) 在氧化铝衬底上于室温在氧气气氛中沉积了 a-GaO1.5 薄膜。在 300≤T/℃≤370 的温度范围内和 2≤p(O2)/mbar≤500 的氧分压范围内，作为温度 T=330℃的函数，确定了氧示踪扩散系数 D和氧表面交换系数 k。发现非晶态氧化镓中氧示踪扩散的激活能为 EA=0.8 eV。此外，还确定了非晶态氧化镓结晶的时-温-转变 (TTT) 图。