Mrukiewicz Mateusz, Kowiorski Krystian, Perkowski Paweł, Mazur Rafał, Djas Małgorzata
Institute of Applied Physics, Military University of Technology, 00-908 Warsaw, Poland.
Department of Chemical Synthesis and Flake Graphene, Institute of Electronic Materials Technology, 01-919 Warsaw, Poland.
Beilstein J Nanotechnol. 2019 Jan 7;10:71-78. doi: 10.3762/bjnano.10.7. eCollection 2019.
We report a threshold voltage decrease in a nematic liquid crystal compound, 4-cyano-4'-pentylbiphenyl (5CB), doped with graphene oxide (GO) flakes at a concentration of 0.05-0.3 wt %. The threshold voltage decrease was observed at the same concentration in electro-optic and dielectric spectroscopy measurements. The effect is related to the disrupted planar alignment due to the strong π-π stacking between the 5CB's benzene rings and the graphene oxide's structure. Additionally, we present the GO concentration dependence on the isotropic-nematic phase transition temperature, electric anisotropy, splay elastic constant, switch-on time, and switch-off time. The shape and dimensions of the GO flakes were studied using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The influence of the GO concentration on the physical properties and switching process in the presence of the electric field was discussed.
我们报道了一种向列型液晶化合物4-氰基-4'-戊基联苯(5CB),在掺杂浓度为0.05 - 0.3 wt%的氧化石墨烯(GO)薄片时,其阈值电压降低。在电光和介电谱测量中,在相同浓度下观察到了阈值电压降低。该效应与5CB苯环和氧化石墨烯结构之间强烈的π-π堆积导致的平面排列破坏有关。此外,我们还展示了GO浓度对各向同性-向列相转变温度、介电各向异性、展曲弹性常数、开启时间和关闭时间的依赖性。使用原子力显微镜(AFM)和扫描电子显微镜(SEM)研究了GO薄片的形状和尺寸。讨论了GO浓度对电场存在下物理性质和开关过程的影响。