氩团簇离子束对硅纳米粉末的溅射
Sputtering of silicon nanopowders by an argon cluster ion beam.
作者信息
Zeng Xiaomei, Pelenovich Vasiliy, Wang Zhenguo, Zuo Wenbin, Belykh Sergey, Tolstogouzov Alexander, Fu Dejun, Xiao Xiangheng
机构信息
Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
School of Power & Mechanical Engineering, Wuhan University, Wuhan, 430072, China.
出版信息
Beilstein J Nanotechnol. 2019 Jan 10;10:135-143. doi: 10.3762/bjnano.10.13. eCollection 2019.
In this work an Ar cluster ion beam with energy in the range of 10-70 keV and dose of 7.2 × 10-2.3 × 10 cluster/cm was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.
在这项工作中，使用能量范围为10 - 70 keV且剂量为7.2×10 - 2.3×10团簇/厘米²的氩团簇离子束来辐照由平均直径为60纳米的颗粒组成的压制硅纳米粉末靶材。研究了靶材密度和团簇离子束参数（能量和剂量）对溅射深度和溅射产额的影响。发现溅射产额随剂量和靶材密度的增加而降低。能量依赖性表现出异常的非单调行为。在17.3 keV时观察到溅射产额的最大值，该值比块状硅的溅射产额高出四十多倍。低能量下的表面粗糙度表现出类似的能量依赖性，在17 keV附近出现最大值。溅射产额的剂量和能量依赖性通过有限尺寸效应和碎片形成效应之间的竞争来解释。
Zotero 插件