Zhou Zekun, Cao Jianwen, Wang Yunkun, Shi Yue, Wang Zhuo, Zhang Bo
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, Sichuan, China.
College of Communication Engineering, Chengdu University of Information Technology, Chengdu, 610225, China.
Nanoscale Res Lett. 2019 Jan 24;14(1):33. doi: 10.1186/s11671-019-2864-7.
In this paper, a nano-watt resistorless subthreshold voltage reference with high-power supply rejection ratio (PSRR) is presented. A self-biased MOS voltage divider is proposed to provide bias current for whole voltage reference, which is a positive temperature coefficient (TC) current containing threshold voltage characteristics. By injecting the generated current into a transistor with a different threshold voltage, a delta threshold voltage with a greatly reduced negative TC is realized and temperature-compensated by a generated positive TC item at the same time. Therefore, a temperature-stable voltage reference is achieved in the proposed compacted method with low power consumption and high PSRR. Verification results with 65-nm CMOS technology demonstrate that the minimum supply voltage can be as low as 0.35 V with a 0.00182-mm active area. The generated reference voltage is 148 mV, with a TC of 28 ppm/°C for the - 30 to 80 °C temperature range. The line sensitivity is 1.8 mV/V, and the PSRR without any filtering capacitor at 100 Hz is 53 dB with a 2.28-nW power consumption.
本文提出了一种具有高电源抑制比（PSRR）的纳瓦级无电阻亚阈值电压基准。提出了一种自偏置MOS分压器为整个电压基准提供偏置电流，该偏置电流是包含阈值电压特性的正温度系数（TC）电流。通过将产生的电流注入具有不同阈值电压的晶体管中，实现了具有大大降低的负温度系数的Δ阈值电压，并同时由产生的正温度系数项进行温度补偿。因此，在所提出的紧凑方法中实现了具有低功耗和高PSRR的温度稳定电压基准。采用65纳米CMOS技术的验证结果表明，最小电源电压可低至0.35V，有源面积为0.00182平方毫米。在-30至80°C温度范围内产生的基准电压为148mV，温度系数为28ppm/°C。线路灵敏度为1.8mV/V，在100Hz时无任何滤波电容的PSRR为53dB，功耗为2.28nW。
