Tian Ye, Qiu Jifang, Liu Chang, Tian Shenghao, Huang Zhuili, Wu Jian
Opt Express. 2019 Jan 21;27(2):999-1009. doi: 10.1364/OE.27.000999.
In this paper, we experimentally demonstrate an ultra-broadband high-performance polarization beam splitter (PBS) based on silicon-on-insulator (SOI) platform. The proposed device is based on a directional coupler consisting of a 70-nm taper-etched waveguide and a slot waveguide with a compact coupling length of 11 microns, the structure of which is suitable for a commercial two-step fabrication process. Benefiting from the preferences of coupling TM mode to slot waveguide and restricting TE mode in taper-etched waveguide, the polarization extinction ratios (PER) for TE and TM polarizations can reach as high as 30 dB and 40 dB at 1550 nm based on experimental results, respectively; besides, an ultra-wide operation bandwidth with PER >20 dB is achieved as ~175 nm from 1450 nm to 1625 nm (covering S, C and L bands), or the bandwidth with PER >25 dB is over ~120 nm from 1462 nm to 1582 nm, which is the largest operation bandwidth to the best of our knowledge. At last, the insertion losses (IL) are -0.17 dB and -0.22 dB for TE and TM polarizations at 1550 nm, respectively.
在本文中,我们通过实验展示了一种基于绝缘体上硅(SOI)平台的超宽带高性能偏振分束器(PBS)。所提出的器件基于一个定向耦合器,该定向耦合器由一个70纳米的锥形蚀刻波导和一个紧凑耦合长度为11微米的槽波导组成,其结构适用于商业化的两步制造工艺。基于实验结果,得益于将TM模式耦合到槽波导以及将TE模式限制在锥形蚀刻波导中的特性,在1550纳米处,TE和TM偏振的偏振消光比(PER)分别可高达30分贝和40分贝;此外,在1450纳米至1625纳米范围内(覆盖S、C和L波段)实现了约175纳米的超宽工作带宽,PER>20分贝,或者在1462纳米至1582纳米范围内,PER>25分贝的带宽超过约120纳米,据我们所知,这是最大的工作带宽。最后,在1550纳米处,TE和TM偏振的插入损耗(IL)分别为-0.17分贝和-0.22分贝。