采用三折波导定向耦合器的具有高消光比的宽带硅偏振光束分离器。

Broadband silicon polarization beam splitter with a high extinction ratio using a triple-bent-waveguide directional coupler.

作者信息

Ong Jun Rong, Ang Thomas Y L, Sahin Ezgi, Pawlina Bryan, Chen G F R, Tan D T H, Lim Soon Thor, Png Ching Eng

出版信息

Opt Lett. 2017 Nov 1;42(21):4450-4453. doi: 10.1364/OL.42.004450.

DOI:10.1364/OL.42.004450

Abstract

We report on the design and experimental demonstration of a broadband silicon polarization beam splitter (PBS) with a high extinction ratio (ER)≥30 dB. This was achieved using triple-bent-waveguide directional coupling in a single PBS, and cascaded PBS topology. For the single PBS, the bandwidths for an ER≥30 dB are 20 nm for the quasi-TE mode, and 70 nm for the quasi-TM mode when a broadband light source (1520-1610 nm) was employed. The insertion loss (IL) varies from 0.2 to 1 dB for the quasi-TE mode and 0.2-2 dB for the quasi-TM mode. The cascaded PBS improved the bandwidth of the quasi-TE mode for an ER≥30 dB to 90 nm, with a low IL of 0.2-2 dB. To the best of our knowledge, our PBS system is one of the best broadband PBSs with an ER as high as ∼42 dB and a low IL below 1 dB around the central wavelength, and experimentally demonstrated using edge-coupling.

摘要

我们报告了一种高消光比（ER）≥30 dB的宽带硅偏振分束器（PBS）的设计与实验演示。这是通过在单个PBS中采用三弯曲波导定向耦合以及级联PBS拓扑结构实现的。对于单个PBS，当使用宽带光源（1520 - 1610 nm）时，准TE模式下ER≥30 dB的带宽为20 nm，准TM模式下为70 nm。准TE模式的插入损耗（IL）在0.2至1 dB之间变化，准TM模式下为0.2 - 2 dB。级联PBS将准TE模式下ER≥30 dB的带宽提高到了90 nm，插入损耗低至0.2 - 2 dB。据我们所知，我们的PBS系统是最佳的宽带PBS之一，在中心波长附近具有高达约42 dB的消光比和低于1 dB的低插入损耗，并通过边缘耦合进行了实验演示。