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基于上能级三重态-单重态系间窜越的高效蓝色荧光 OLED 器件

Highly Efficient Blue Fluorescent OLEDs Based on Upper Level Triplet-Singlet Intersystem Crossing.

机构信息

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China.

State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China.

出版信息

Adv Mater. 2019 Mar;31(12):e1807388. doi: 10.1002/adma.201807388. Epub 2019 Feb 4.

Abstract

Purely organic electroluminescent materials, such as thermally activated delayed fluorescent (TADF) and triplet-triplet annihilation (TTA) materials, basically harness triplet excitons from the lowest triplet excited state (T ) to realize high efficiency. Here, a fluorescent material that can convert triplet excitons into singlet excitons from the high-lying excited state (T ), referred to here as a "hot exciton" path, is reported. The energy levels of this compound are determined from the sensitization and nanosecond transient absorption spectroscopy measurements, i.e., small splitting energy between S and T and rather large T -T energy gap, which are expected to impede the internal conversion (IC) from T to T and facilitate the reverse intersystem crossing from the high-lying triplet state (hRISC). Through sensitizing the T state with ketones, the existence of the hRISC process with an ns-scale delayed lifetime is confirmed. Benefiting from this fast triplet-singlet conversion, the nondoped device based on this "hot exciton" material reaches a maximum external quantum efficiency exceeding 10%, with a small efficiency roll-off and CIE coordinates of (0.15, 0.13). These results reveal that the "hot exciton" path is a promising way to exploit high efficient, stable fluorescent emitters, especially for the pure-blue and deep-blue fluorescent organic light-emitting devices.

摘要

纯有机电致发光材料,如热激活延迟荧光(TADF)和三重态-三重态湮灭(TTA)材料,基本利用最低三重态激发态(T )中的三重态激子来实现高效率。在此,报道了一种可以将来自高能激发态(T )的三重态激子转化为单重态激子的荧光材料,这里称为“热激子”途径。该化合物的能级通过敏化和纳秒瞬态吸收光谱测量确定,即 S 和 T 之间的小分裂能和相当大的 T-T 能隙,预计会阻碍从 T 到 T 的内转换(IC)并促进从高能三重态(hRISC)的反向系间穿越。通过用酮敏化 T 态,证实了具有 ns 级延迟寿命的 hRISC 过程的存在。受益于这种快速的三重态-单重态转换,基于这种“热激子”材料的无掺杂器件达到了超过 10%的最大外量子效率,效率滚降较小,CIE 坐标为(0.15,0.13)。这些结果表明,“热激子”途径是开发高效、稳定荧光发射器的一种很有前途的方法,特别是对于纯蓝色和深蓝色荧光有机发光器件。

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