Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, College of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, P. R. China.
Key Laboratory of Jiangxi University for Applied Chemistry and Chemical Biology, Yichun University, Yichun, 336000, P. R. China.
Chem Asian J. 2019 Apr 1;14(7):1028-1033. doi: 10.1002/asia.201801921. Epub 2019 Mar 12.
Piezoelectric materials are a class of important functional materials applied in high-voltage sources, sensors, vibration reducers, actuators, motors, and so on. Herein, [(CH ) S] Bi Br is a brilliant semiconducting organic-inorganic hybrid perovskite-type non-ferroelectric piezoelectric with excellent piezoelectricity. Strikingly, the value of the piezoelectric coefficient d is estimated as ≈18 pC N . Such a large piezoelectric coefficient in non-ferroelectric piezoelectric has been scarcely reported and is comparable with those of typically one-composition non-ferroelectric piezoelectrics such as ZnO (3pC N ) and much greater than those of most known typical materials. In addition, 1 exhibits semiconducting behavior with an optical band gap of ≈2.58 eV that is lower than the reported value of 3.37 eV for ZnO. This discovery opens a new avenue to exploit molecular non-ferroelectric piezoelectric and should stimulate further exploration of non-ferroelectric piezoelectric due to their high stability and low loss characteristics.
压电材料是一类重要的功能材料，应用于高压电源、传感器、减振器、执行器、电动机等领域。本文中，[(CH ) S] Bi Br 是一种具有优异压电性能的新型半导体有机-无机混合钙钛矿型非铁电压电材料。值得注意的是，该材料的压电系数 d 值约为 18 pC N ，这在非铁电压电材料中极为罕见，与 ZnO（3pC N ）等典型的单一成分非铁电压电材料相当，远大于大多数已知典型材料的系数。此外，1 表现出半导体行为，光学带隙约为 2.58 eV，低于 ZnO 的报道值 3.37 eV。这一发现为开发分子非铁电压电材料开辟了新途径，由于其高稳定性和低损耗的特点，应该会进一步激发对非铁电压电材料的探索。
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