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卤化物钙钛矿分子铁电薄膜中的横向压电效应

Superior Transverse Piezoelectricity in a Halide Perovskite Molecular Ferroelectric Thin Film.

作者信息

Wang Zhong-Xia, Zhang Hua, Wang Fang, Cheng Hao, He Wen-Hui, Liu Yu-Hua, Huang Xue-Qin, Li Peng-Fei

机构信息

Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, PR China.

出版信息

J Am Chem Soc. 2020 Jul 22;142(29):12857-12864. doi: 10.1021/jacs.0c06064. Epub 2020 Jul 9.

Abstract

Piezoelectric materials with inherent mechanical-electric coupling effect are a crucial family of functional materials in high-end information technology. For practical applications, the transverse piezoelectric performance ( or ) is mainly considered, because this parameter is a vitally important index to characterize the performance of piezoelectric thin films. However, the transverse piezoelectricity of the thin films as a key figure of merit is seldom mentioned in molecular ferroelectrics. Herein, we report that a new 1D halide perovskite ferroelectric ,-dimethylallylammoniumCdCl (DMAACdCl) exhibits an above room-temperature ferroelectric phase transition with a saturated polarization of 1.9 μC cm and a coercive field of 5.0 kV cm. The thin film of DMAACdCl is successfully fabricated using an easy processing spinning method and maintains well ferroelectric properties verified by piezoresponse force microscopy (PFM). More significantly, the ferroelectric thin film offers superior transverse piezoelectricity with an in-plane piezoelectric response of about 41 pC N, which is about twice that of well-known piezoelectric polymer PVDF (21 pC N). Transverse piezoelectricity has been scarcely studied in molecular ferroelectrics, and its exploitation would play an important role in the design of next-generation smart piezoelectric devices.

摘要

具有固有机电耦合效应的压电材料是高端信息技术中一类关键的功能材料。在实际应用中,主要考虑横向压电性能(或 ),因为该参数是表征压电薄膜性能的至关重要的指标。然而,作为关键性能指标的薄膜横向压电性在分子铁电体中很少被提及。在此,我们报道了一种新型一维卤化物钙钛矿铁电体,-二甲基烯丙基氯化铵(DMAACdCl)呈现出高于室温的铁电相变,其饱和极化强度为1.9 μC/cm²,矫顽场为5.0 kV/cm。采用简便的旋涂法成功制备了DMAACdCl薄膜,并通过压电响应力显微镜(PFM)验证其保持了良好的铁电性能。更重要的是,该铁电薄膜具有优异的横向压电性,面内压电响应约为41 pC/N,约为著名的压电聚合物聚偏氟乙烯(PVDF,21 pC/N)的两倍。横向压电性在分子铁电体中鲜有研究,其开发将在下一代智能压电器件的设计中发挥重要作用。

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