Department of Chemical Engineering and Materials Science , University of Minnesota, Twin Cities , Minneapolis , Minnesota 55455 , United States.
ACS Appl Mater Interfaces. 2019 Feb 27;11(8):7666-7670. doi: 10.1021/acsami.8b22034. Epub 2019 Feb 18.
We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (-4 V ≤ V ≤ +4 V) was obtained for reversible electrostatic doping of SrSnO films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.
我们研究了基于自由基的分子束外延生长的掺镧 SrSnO 宽禁带氧化物离子凝胶门控。在低温下，施加正偏压可使方阻在 3 个数量级内实现可逆静电控制，使样品从莫特变程跳跃转变为弱局域输运。低温输运行为分析表明，电子-电子相互作用和弱局域效应是主要的散射机制。SrSnO 薄膜的可逆静电掺杂获得了较大的电压窗口（-4 V ≤ V ≤ +4 V），表明锡酸盐与电解质门控的氧化还原化学具有稳健性，与偏置类型无关。
