Ungan Fatih, Sari Huseyin, Kasapoglu Esin, Yesilgul Unal, Sakiroglu Serpil, Sökmen Ismail
Department of Optical Engineering, Sivas Cumhuriyet University, 58140 Sivas, Turkey.
Department of Mathematical and Natural Science Education, Sivas Cumhuriyet University, 58140 Sivas, Turkey.
J Nanosci Nanotechnol. 2019 Jul 1;19(7):4167-4171. doi: 10.1166/jnn.2019.16755.
In the present work, the effect of non-resonant intense laser field on the nonlinear optical rectification and second and third harmonic generation of -type double -doped GaAs quantum well is studied in detail. The energy eigenvalues and eigenfunctions of this structure are calculated within the framework of effective mass and envelope function approximations. Analytic formulas for the coefficients of nonlinear optical rectification and second and third harmonic generation are obtained using the compact-density matrix approach (CDMA) and iterative method. Based on this model, our obtained numerical results are reported as a function of incident photon energy for several values of non-resonant intense laser field. The results show that the coefficients of nonlinear optical rectification and second and third harmonic generation are strongly affected by the non-resonant intense laser field.
在本工作中，详细研究了非共振强激光场对 - 型双掺杂砷化镓量子阱的非线性光学整流以及二次和三次谐波产生的影响。在有效质量和包络函数近似框架内计算了该结构的能量本征值和本征函数。使用紧凑密度矩阵方法（CDMA）和迭代法获得了非线性光学整流以及二次和三次谐波产生系数的解析公式。基于该模型，针对几个非共振强激光场值，将我们获得的数值结果作为入射光子能量的函数进行了报道。结果表明，非线性光学整流以及二次和三次谐波产生的系数受到非共振强激光场的强烈影响。
