Jiang Zhongjun, Luo Huiwen, Guo Songpo, Wang Liang
Opt Lett. 2019 Feb 15;44(4):783-786. doi: 10.1364/OL.44.000783.
In this Letter, 40 nm thick photoresist (PR)-compatible plasmonic nanolithography using a bowtie aperture incorporated with a metal-insulator-metal (MIM) structure is studied numerically and experimentally. The simulation results show that with a 20 nm index-matching layer, the light field that exits from the bowtie aperture penetrates into a 40 nm thick PR by using a MIM configuration. Imaging contrast calculations indicate that sub-45 nm resolution with an exposure depth in the order of tens of nanometers is achievable, which is confirmed by the experimental results. In addition, the ability to generate high-resolution, complex patterns using this technique via scanning is demonstrated. This brings plasmonic nanolithography using a bowtie aperture one step closer to practical applications.
在本信函中，对使用结合了金属 - 绝缘体 - 金属（MIM）结构的蝴蝶结形孔径的40纳米厚光刻胶（PR）兼容等离子体纳米光刻技术进行了数值和实验研究。模拟结果表明，通过使用MIM结构，在有20纳米折射率匹配层的情况下，从蝴蝶结形孔径出射的光场能够穿透到40纳米厚的光刻胶中。成像对比度计算表明，可以实现低于45纳米的分辨率以及数十纳米量级的曝光深度，实验结果证实了这一点。此外，还展示了使用该技术通过扫描生成高分辨率复杂图案的能力。这使得使用蝴蝶结形孔径的等离子体纳米光刻技术向实际应用迈进了一步。
