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在 TiO. 中共振和选择性激发光催化活性缺陷位

Resonant and Selective Excitation of Photocatalytically Active Defect Sites in TiO.

机构信息

Department of Chemical Engineering , University of California, Santa Barbara , Santa Barbara , California 93106-5080 , United States.

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors , Chinese Academy of Science , Beijing 100083 , P. R. China.

出版信息

ACS Appl Mater Interfaces. 2019 Mar 13;11(10):10351-10355. doi: 10.1021/acsami.8b12621. Epub 2019 Mar 1.

DOI:10.1021/acsami.8b12621
PMID:30768239
Abstract

It has been known for several decades that defects are largely responsible for the catalytically active sites on metal and semiconductor surfaces. However, it is difficult to directly probe these active sites because the defects associated with them are often relatively rare with respect to the stoichiometric crystalline surface. In the work presented here, we demonstrate a method to selectively probe defect-mediated photocatalysis through differential alternating current (ac) photocurrent (PC) measurements. In this approach, electrons are photoexcited from the valence band to a relatively narrow distribution of subband gap states in TiO and then subsequently to the ions in solution. Because of their limited number, these defect states fill up quickly, resulting in Pauli blocking, and are thereby undetectable under direct current or continuous wave excitation. In the method demonstrated here, the incident light is modulated with an optical chopper, whereas the PC is measured with a lock-in amplifier. Thin (5 nm) films of TiO deposited by atomic layer deposition on various metal films, including Au, Cu, and Al, exhibit the same wavelength-dependent PC spectra, with a broad peak centered around 2.0 eV corresponding to the band-to-defect transition associated with the hydrogen evolution reaction (HER). While the UV-vis absorption spectra of these films show no features at 2.0 eV, photoluminescence (PL) spectra of these photoelectrodes show a similar wavelength dependence with a peak of around 2.0 eV, corresponding to the subband gap emission associated with these defect sites. As a control, alumina (AlO) films exhibit no PL or PC over the visible wavelength range. The ac PC plotted as a function of electrode potential shows a peak of around -0.4 to -0.1 V versus normal hydrogen electrode, as the monoenergetic defect states are tuned through a resonance with the HER potential. This approach enables the direct photoexcitation of catalytically active defect sites to be studied selectively without the interference of the continuum interband transitions or the effects of Pauli blocking, which is limited by the slow turnover time of the catalytically active sites, typically on the order of 1 μs. We believe that this general approach provides an important new way to study the role of defects in catalysis in an area where selective spectroscopic studies of these are few.

摘要

几十年来,人们已经知道缺陷在很大程度上是金属和半导体表面催化活性位的原因。然而,由于与它们相关的缺陷相对于化学计量晶体表面通常相对较少,因此很难直接探测这些活性位。在本文中,我们展示了一种通过差分交流(ac)光电流(PC)测量选择性探测缺陷介导光催化的方法。在这种方法中,电子从价带光激发到 TiO 中相对较窄的亚带隙态分布,然后随后光激发到溶液中的离子。由于其数量有限,这些缺陷态很快填满,导致泡利阻塞,因此在直流或连续波激发下无法检测到。在本文中展示的方法中,用光学斩波器调制入射光,而用锁相放大器测量 PC。通过原子层沉积在各种金属膜(包括 Au、Cu 和 Al)上沉积的 5nm 厚的 TiO 薄膜表现出相同的波长依赖性 PC 光谱,其 2.0eV 左右的宽峰对应于与 HER 相关的带缺陷跃迁。虽然这些薄膜的紫外可见吸收光谱在 2.0eV 处没有特征,但这些光电管的光致发光(PL)光谱显示出类似的波长依赖性,峰值约为 2.0eV,对应于这些缺陷位的亚带隙发射。作为对照,氧化铝(AlO)薄膜在可见波长范围内没有 PL 或 PC。AC PC 作为电极电位的函数绘制,在相对于标准氢电极的-0.4 至-0.1V 处出现一个峰值,因为单能缺陷态通过与 HER 电位的共振被调谐。这种方法能够选择性地研究催化活性缺陷位的直接光激发,而不会受到连续带间跃迁或泡利阻塞的干扰,这受到催化活性位的缓慢转换时间的限制,通常在 1μs 左右。我们相信,这种通用方法为研究缺陷在催化中的作用提供了一种重要的新方法,在这个领域中,对这些缺陷的选择性光谱研究很少。

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