State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Phys Chem Chem Phys. 2019 Mar 13;21(11):6186-6197. doi: 10.1039/c8cp07685e.
The hydrogen vacancy (VH) is the most common point defect that may lead to optical damage of potassium dihydrogen phosphate (KDP) and its analog ammonium dihydrogen phosphate (ADP), further limiting their practical application in high-power laser systems. In this work, we have grown KDP and ADP crystals by using a rapid growth method, and investigated the physical origin of the different stability of VH as well as the defect-induced electronic structure and optical absorption in KDP and ADP crystals. The inclusion of van der Waals correction to density functional theory calculations is found to have little influence on VH energetics of KDP whereas it largely reduces the charge transition level ε(+/-) of VH by >2 eV in ADP. It is found that hydrogen vacancies mainly contribute to the redshift of the measured absorption edges of both KDP and ADP crystals. Owing to the varied lattice environments and locations, the VH defects exhibit different stability, and electronic and optical properties in KDP and ADP crystals. Notably, the extra optical absorption caused by the positively-charged VH in KDP could be largely reduced by decreasing the defect concentration, whereas ADP exhibits defect-location dependence - the optical damage center of the VH in the NH4+ group could not be eliminated because of electron capture of its neighboring N atoms. The calculation results help us to better understand the origin of laser damage in KDP and ADP crystals.
氢空位 (VH) 是最常见的点缺陷,可能导致磷酸二氢钾 (KDP) 及其类似物磷酸二氢铵 (ADP) 的光学损伤,进一步限制了它们在高功率激光系统中的实际应用。在这项工作中,我们使用快速生长方法生长了 KDP 和 ADP 晶体,并研究了 VH 不同稳定性的物理起源以及 KDP 和 ADP 晶体中缺陷诱导的电子结构和光吸收。对密度泛函理论计算包含范德华修正的研究发现,对于 KDP 的 VH 能态几乎没有影响,而对于 ADP,它大大降低了 VH 的电荷跃迁能级 ε(+/-) 超过 2 eV。研究发现,氢空位主要导致 KDP 和 ADP 晶体测量吸收边缘的红移。由于晶格环境和位置的不同,VH 缺陷在 KDP 和 ADP 晶体中表现出不同的稳定性、电子和光学性质。值得注意的是,KDP 中带正电荷的 VH 引起的额外光吸收可以通过降低缺陷浓度来大大降低,而 ADP 则表现出缺陷位置依赖性 - VH 在 NH4+ 基团中的光损伤中心不能被消除,因为其相邻 N 原子的电子捕获。计算结果有助于我们更好地理解 KDP 和 ADP 晶体中激光损伤的起源。