基于惠斯通电桥的低浓度响应氢气传感器。

Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge.

机构信息

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.

National Key Laboratory of Science and Technology on Vacuum Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000, China.

出版信息

Sensors (Basel). 2019 Mar 4;19(5):1096. doi: 10.3390/s19051096.

DOI:10.3390/s19051096

PMID:30836675

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6427178/

Abstract

The PdNi film hydrogen sensors with Wheatstone bridge structure were designed and fabricated with the micro-electro-mechanical system (MEMS) technology. The integrated sensors consisted of four PdNi alloy film resistors. The internal two were shielded with silicon nitride film and used as reference resistors, while the others were used for hydrogen sensing. The PdNi alloy films and SiN films were deposited by magnetron sputtering. The morphology and microstructure of the PdNi films were characterized with X-ray diffraction (XRD). For efficient data acquisition, the output signal was converted from resistance to voltage. Hydrogen (H₂) sensing properties of PdNi film hydrogen sensors with Wheatstone bridge structure were investigated under different temperatures (30 °C, 50 °C and 70 °C) and H₂ concentrations (from 10 ppm to 0.4%). The hydrogen sensor demonstrated distinct response at different hydrogen concentrations and high repeatability in cycle testing under 0.4% H₂ concentration. Towards 10 ppm hydrogen, the PdNi film hydrogen sensor had evident and collectable output voltage of 600 μV.

摘要

采用微机电系统（MEMS）技术设计并制作了具有惠斯通电桥结构的 PdNi 薄膜氢气传感器。集成传感器由四个 PdNi 合金薄膜电阻器组成。内部两个用氮化硅薄膜屏蔽，用作参考电阻器，而其他两个则用于氢气传感。PdNi 合金薄膜和 SiN 薄膜采用磁控溅射沉积。采用 X 射线衍射（XRD）对 PdNi 薄膜的形貌和微观结构进行了表征。为了高效地采集数据，将输出信号从电阻转换为电压。研究了具有惠斯通电桥结构的 PdNi 薄膜氢气传感器在不同温度（30°C、50°C 和 70°C）和 H₂浓度（从 10 ppm 到 0.4%）下的氢气传感性能。在 0.4% H₂浓度下进行循环测试时，氢气传感器在不同氢气浓度下表现出明显的响应，并且具有高重复性。对于 10 ppm 的氢气，PdNi 薄膜氢气传感器具有明显且可采集的 600 μV 输出电压。