Zhang Qi, Liang Xiaoya, Bi Wenzhe, Pang Xing, Zhao Yulong
State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Electronic Materials Research Lab, Key Lab of Education Ministry, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Micromachines (Basel). 2024 Sep 12;15(9):1144. doi: 10.3390/mi15091144.
Amorphous carbon (a-C) has promising potential for temperature sensing due to its outstanding properties. In this work, an a-C thin film temperature sensor integrated with the MEMS silicon accelerometer was proposed, and a-C film was deposited on the fixed frame of the accelerometer chip. The a-C film was deposited by DC magnetron sputtering and linear ion beam, respectively. The nanostructures of two types of films were observed by SEM and TEM. The cluster size of sp was analyzed by Raman, and the content of sp and sp of the carbon film was analyzed by XPS. It showed that the DC-sputtered amorphous carbon film, which had a higher sp content, had better temperature-sensitive properties. Then, an integrated sensor chip was designed, and the structure of the accelerometer was simulated and optimized to determine the final sizes. The temperature sensor module had a sensitivity of 1.62 mV/°C at the input voltage of 5 V with a linearity of 0.9958 in the temperature range of 20~150 °C. The sensitivity of the sensor is slightly higher than that of traditional metal film temperature sensors. The accelerometer module had a sensitivity of 1.4 mV/g/5 V, a nonlinearity of 0.38%, a repeatability of 1.56%, a total thermomechanical noise of 509 μg over the range of 1 to 20 Hz, and an average thermomechanical noise density of 116 µg/√Hz, which is smaller than the input acceleration amplitude for testing sensitivity. Under different temperatures, the performance of the accelerometer was tested. This research provided significant insights into the convenient procedure to develop a high-performance, economical temperature-accelerometer-integrated MEMS sensor.
非晶碳(a-C)因其优异的性能在温度传感方面具有广阔的应用潜力。在本工作中,提出了一种集成MEMS硅加速度计的a-C薄膜温度传感器,并在加速度计芯片的固定框架上沉积了a-C薄膜。分别采用直流磁控溅射和线性离子束沉积a-C薄膜。通过扫描电子显微镜(SEM)和透射电子显微镜(TEM)观察了两种薄膜的纳米结构。通过拉曼光谱分析了sp的团簇尺寸,通过X射线光电子能谱(XPS)分析了碳膜中sp和sp的含量。结果表明,具有较高sp含量的直流溅射非晶碳膜具有更好的温度敏感性能。然后,设计了集成传感器芯片,并对加速度计的结构进行了模拟和优化,以确定最终尺寸。温度传感器模块在5 V输入电压下的灵敏度为1.62 mV/°C,在20~150 °C温度范围内的线性度为0.9958。该传感器的灵敏度略高于传统金属薄膜温度传感器。加速度计模块的灵敏度为1.4 mV/g/5 V,非线性度为0.38%,重复性为1.56%,在1至20 Hz范围内的总热机械噪声为509 μg,平均热机械噪声密度为116 µg/√Hz,小于测试灵敏度时的输入加速度幅值。在不同温度下对加速度计的性能进行了测试。本研究为开发高性能、经济型温度-加速度计集成MEMS传感器的便捷程序提供了重要见解。