Lim Jean Sun, You Hyun Sik, Han Songhee, Kim Sang Kyu
Department of Chemistry , KAIST , Daejeon 34141 , Republic of Korea.
J Phys Chem A. 2019 Apr 4;123(13):2634-2639. doi: 10.1021/acs.jpca.9b00803. Epub 2019 Mar 19.
The photoinduced S-H (D) bond fission dynamics of four ortho-substituted thiophenols, 2-fluoro, 2-chloro, 2-bromo, and 2-methoxythiophenol at a pump wavelength of 243 nm, have been investigated by velocity-map imaging and high-level electronic structure calculations. The D atom images of the deuterated ortho-substituted thiophenols show much reduced X̃/Ã branching ratios of the cofragment radicals over that of bare thiophenol. The angular distributions of the D fragment display negative anisotropies, indicating that transition dipole moments are perpendicular to the fast dissociating S-D bond axis. Initial excitation at 243 nm occurs directly to the πσ* state or to the 2ππ* state followed by efficient coupling to the πσ* state. The calculated potential energy curves for the πσ* or 2ππ* excited states of the ortho-substituted thiophenols along the CCS-D torsion angle (ϕ) display minima at the nonplanar structures, whereas all of the states for bare thiophenol present minima at the planar geometries. This different topology of the ortho-substituted thiophenols in the excited states induces the wide spread of the reactive flux along the ϕ coordinate on the repulsive surface as it should experience significant torque with respect to ϕ during the fragmentation. This encourages the dissociating molecules to follow the adiabatic path at the conical intersection between the ground and the πσ* states at extended S-D bond lengths, giving rise to decreased X̃/Ã branching ratios, demonstrating that the excited-state molecular structure dictates the nonadiabatic transition probability.
利用速度成像和高水平电子结构计算方法,研究了四种邻位取代硫酚(2-氟硫酚、2-氯硫酚、2-溴硫酚和2-甲氧基硫酚)在243nm泵浦波长下的光诱导S-H(D)键裂变动力学。氘代邻位取代硫酚的D原子图像显示,与裸硫酚相比,共碎片自由基的X̃/Ã分支比大幅降低。D碎片的角分布呈现负各向异性,表明跃迁偶极矩垂直于快速解离的S-D键轴。在243nm处的初始激发直接发生在πσ态或2ππ态,随后有效耦合到πσ态。邻位取代硫酚的πσ或2ππ激发态沿CCS-D扭转角(ϕ)的计算势能曲线在非平面结构处呈现最小值,而裸硫酚的所有态在平面几何结构处呈现最小值。邻位取代硫酚在激发态的这种不同拓扑结构导致反应通量在排斥面上沿ϕ坐标广泛分布,因为在碎片化过程中它相对于ϕ应经历显著的扭矩。这促使解离分子在S-D键伸长时沿着基态与πσ态之间的锥形交叉点处的绝热路径,导致X̃/Ã分支比降低,表明激发态分子结构决定了非绝热跃迁概率。