Lee Sangjun, Heo Hyungjun, Kim Sangin
Department of Electrical and Computer Engineering, Ajou University, Suwon, South Korea.
Sci Rep. 2019 Mar 12;9(1):4294. doi: 10.1038/s41598-019-40945-4.
We propose the narrowband perfect absorbers with enormously high fabrication tolerance, which consists of a low-contrast grating and a finite distributed Bragg reflector (DBR) layer with an ultrathin absorbing medium (graphene). It is numerically shown that the proposed perfect absorber outperforms the previously proposed schemes in fabrication tolerance. According to the rigorous coupled wave analysis (RCWA) and coupled mode theory (CMT) fitting, over a considerably wide range of grating width and thickness, the proposed absorber provides a proper ratio of leakage rate to loss rate while preserving resonant condition, so that almost perfect absorption (>99.9%) can be obtained. This result is attributed to the strong electric field confinement in the DBR region rather than the grating layer owing to lower index of grating compared to DBR. In addition, without degrading the fabrication tolerance, the bandwidth of the proposed absorber can be controlled by the DBR thickness (the number of pairs) and a narrow absorbing bandwidth of sub-nanometer is achieved with 8.5 Si/SiO pair stacked DBR.
我们提出了具有极高制造容差的窄带完美吸收体,它由低对比度光栅和带有超薄吸收介质(石墨烯)的有限分布布拉格反射器(DBR)层组成。数值结果表明,所提出的完美吸收体在制造容差方面优于先前提出的方案。根据严格耦合波分析(RCWA)和耦合模理论(CMT)拟合,在所研究的相当宽的光栅宽度和厚度范围内,所提出的吸收体在保持共振条件的同时,提供了适当的泄漏率与损耗率之比,从而可以获得几乎完美的吸收(>99.9%)。这一结果归因于与DBR相比,光栅的折射率较低,使得DBR区域而非光栅层具有更强的电场限制。此外,在所提出的吸收体不降低制造容差的情况下,其带宽可以通过DBR厚度(对数)来控制,并且通过8.5对Si/SiO2堆叠的DBR实现了亚纳米级的窄吸收带宽。