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通过射频磁控反应共溅射沉积的CaO⁻CoO薄膜的两阶段相变生长CaCoO₂薄膜

Growth of CaCoO₂ Thin Films by A Two-Stage Phase Transformation from CaO⁻CoO Thin Films Deposited by Rf-Magnetron Reactive Cosputtering.

作者信息

Paul Biplab, Lu Jun, Eklund Per

机构信息

Thin Film Physics Division, Department of Physics Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping, Sweden.

出版信息

Nanomaterials (Basel). 2019 Mar 15;9(3):443. doi: 10.3390/nano9030443.

Abstract

The layered cobaltates ACoO₂ (A: alkali metals and alkaline earth metals) are of interest in the area of energy harvesting and electronic applications, due to their good electronic and thermoelectric properties. However, their future widespread applicability depends on the simplicity and cost of the growth technique. Here, we have investigated the sputtering/annealing technique for the growth of CaCoO₂ (x = 0.33) thin films. In this approach, CaO⁻CoO film is first deposited by rf-magnetron reactive cosputtering from metallic targets of Ca and Co. Second, the as-deposited film is reactively annealed under O₂ gas flow to form the final phase of CaCoO₂. The advantage of the present technique is that, unlike conventional sputtering from oxide targets, the sputtering is done from the metallic targets of Ca and Co; thus, the deposition rate is high. Furthermore, the composition of the film is controllable by controlling the power at the targets.

摘要

层状钴酸盐ACoO₂(A:碱金属和碱土金属)因其良好的电学和热电性能而在能量收集和电子应用领域备受关注。然而,它们未来的广泛应用取决于生长技术的简易性和成本。在此,我们研究了用于生长CaCoO₂(x = 0.33)薄膜的溅射/退火技术。在这种方法中,首先通过射频磁控反应共溅射从Ca和Co的金属靶材沉积CaO⁻CoO薄膜。其次,将沉积后的薄膜在氧气流中进行反应退火,以形成CaCoO₂的最终相。本技术的优点是,与从氧化物靶材进行的传统溅射不同,此次溅射是从Ca和Co的金属靶材进行的;因此,沉积速率很高。此外,通过控制靶材的功率可以控制薄膜的成分。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11c9/6474102/b667b52dc7e6/nanomaterials-09-00443-g001.jpg

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