Yuan Jun, Zhang Yunqiang, Zhou Liuyang, Zhang Chujun, Lau Tsz-Ki, Zhang Guichuan, Lu Xinhui, Yip Hin-Lap, So Shu Kong, Beaupré Serge, Mainville Mathieu, Johnson Paul A, Leclerc Mario, Chen Honggang, Peng Hongjian, Li Yongfang, Zou Yingping
College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, P. R. China.
Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Adv Mater. 2019 Apr;31(17):e1807577. doi: 10.1002/adma.201807577. Epub 2019 Mar 18.
Narrow bandgap n-type organic semiconductors (n-OS) have attracted great attention in recent years as acceptors in organic solar cells (OSCs), due to their easily tuned absorption and electronic energy levels in comparison with fullerene acceptors. Herein, a new n-OS acceptor, Y5, with an electron-deficient-core-based fused structure is designed and synthesized, which exhibits a strong absorption in the 600-900 nm region with an extinction coefficient of 1.24 × 10 cm , and an electron mobility of 2.11 × 10 cm V s . By blending Y5 with three types of common medium-bandgap polymers (J61, PBDB-T, and TTFQx-T1) as donors, all devices exhibit high short-circuit current densities over 20 mA cm . As a result, the power conversion efficiency of the Y5-based OSCs with J61, TTFQx-T1, and PBDB-T reaches 11.0%, 13.1%, and 14.1%, respectively. This indicates that Y5 is a universal and highly efficient n-OS acceptor for applications in organic solar cells.
近年来,窄带隙n型有机半导体(n-OS)作为有机太阳能电池(OSC)中的受体受到了广泛关注,因为与富勒烯受体相比,它们的吸收和电子能级易于调节。在此,设计并合成了一种新型的基于缺电子核稠合结构的n-OS受体Y5,其在600-900nm区域表现出强烈吸收,消光系数为1.24×10 cm ,电子迁移率为2.11×10 cm V s 。通过将Y5与三种常见的中带隙聚合物(J61、PBDB-T和TTFQx-T1)作为供体混合,所有器件都表现出超过20 mA cm 的高短路电流密度。结果,基于Y5与J61、TTFQx-T1和PBDB-T的有机太阳能电池的功率转换效率分别达到11.0%、13.1%和14.1%。这表明Y5是一种用于有机太阳能电池应用的通用且高效的n-OS受体。