School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China.
Phys Chem Chem Phys. 2019 Apr 3;21(14):7440-7446. doi: 10.1039/c9cp00011a.
Two-dimensional ferroelastic materials have triggered tremendous interest for applications in nonvolatile memory devices. Here using first-principles calculations, we identify a novel class of two-dimensional ferroelastic materials, single-layer InOY (Y = Cl/Br). The ferroelasticity in single-layer InOY shows a moderate switching barrier and high reversible strain, which are promising for practical applications in nonvolatile memory. Meanwhile, single-layer InOY is a semiconductor with an indirect band gap. The unique combination of being a semiconductor with ferroelastic behaviors would be beneficial for the integration of functional nonvolatile memories into nanocircuits. Moreover, both systems can readily be exfoliated from their layered bulks due to the weak interlayer interactions. These intriguing behaviors suggest the high potential of single-layer InOY for practical memory device applications.
二维铁弹性材料在非易失性存储器件中的应用引起了极大的关注。在这里，我们使用第一性原理计算，确定了一类新型二维铁弹性材料，即单层 InOY（Y = Cl/Br）。单层 InOY 的铁弹性表现出适中的开关势垒和高的可回复应变，这对于非易失性存储的实际应用很有前景。同时，单层 InOY 是一种半导体，具有间接带隙。将铁弹性行为与半导体特性相结合，将有利于将功能型非易失性存储器集成到纳米电路中。此外，由于层间相互作用较弱，这两种体系都可以很容易地从其层状块状体中剥离出来。这些有趣的行为表明，单层 InOY 很有潜力应用于实际的存储器件。
