Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China.
School of Chemical and Environmental Engineering, Jiangsu University of Technology, Changzhou, Jiangsu, 213001, P. R. China.
Nat Commun. 2019 Mar 20;10(1):1294. doi: 10.1038/s41467-019-09206-w.
Ultraweak light detectors have wide-ranging important applications such as astronomical observation, remote sensing, laser ranging, and night vision. Current commercial ultraweak light detectors are commonly based on a photomultiplier tube or an avalanche photodiode, and they are incompatible with microelectronic devices for digital imaging applications, because of their high operating voltage and bulky size. Herein, we develop a memory phototransistor for ultraweak light detection, by exploiting the charge-storage accumulative effect in CdS nanoribbon. The memory phototransistors break the power law of traditional photodetectors and follow a time-dependent exponential-association photoelectric conversion law. Significantly, the memory phototransistors exhibit ultrahigh responsivity of 3.8 × 10 A W and detectivity of 7.7 × 10 Jones. As a result, the memory phototransistors are able to detect ultraweak light of 6 nW cm with an extremely high sensitivity of 4 × 10. The proposed memory phototransistors offer a design concept for ultraweak light sensing devices.
超弱光探测器在天文观测、遥感、激光测距、夜视等领域有着广泛的重要应用。目前的商用超弱光探测器通常基于光电倍增管或雪崩光电二极管，由于其工作电压高、体积庞大，与微电子数字成像应用的器件不兼容。在此，我们通过利用 CdS 纳米带的电荷存储累积效应，开发了一种用于超弱光检测的记忆型光电晶体管。该记忆型光电晶体管打破了传统光电探测器的幂律关系，遵循时间相关的指数关联光电转换定律。值得注意的是，记忆型光电晶体管表现出超高的响应率 3.8×10^A W 和探测率 7.7×10^12 Jones。因此，该记忆型光电晶体管能够以极高的灵敏度 4×10^12 检测低至 6 nW cm 的超弱光。所提出的记忆型光电晶体管为超弱光传感设备提供了一种设计理念。
