Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana IL 61801, USA.
Department of Electrical and Computer Engineering,University of Illinois at Urbana-Champaign, Urbana IL 61801, USA.
Phys Rev E. 2019 Feb;99(2-1):022120. doi: 10.1103/PhysRevE.99.022120.
Scale dependence of electrostatic and magnetostatic properties is investigated in the setting of spatially random linear lossless materials with statistically homogeneous and spatially ergodic random microstructures. First, from the Hill-Mandel homogenization conditions adapted to electric and magnetic fields, uniform boundary conditions are formulated for a statistical volume element (SVE). From these conditions, there follow upper and lower mesoscale bounds on the macroscale (effective) electrical permittivity and magnetic permeability. Using computational electromagnetics methods, these bounds are obtained through numerical simulations for composites of two types: (i) two-dimensional (2D) random checkerboard (two-phase) microstructures and (ii) analogous 3D random (two-phase) media. The simulation results demonstrate a scale-dependent trend of these bounds toward the properties of a representative volume element (RVE). This transition from SVE to RVE is described using a scaling function dependent on the mesoscale δ, the volume fraction v_{f}, and the property contrast k between two phases. The scaling function is calibrated through fitting the data obtained from extensive simulations (∼10000) conducted over the aforementioned parameter space. The RVE size of a given microstructure can be estimated down to within any desired accuracy using this scaling function as parametrized by the contrast and the volume fraction of two phases.
在具有统计均匀且空间遍历随机微结构的空间随机线性无损耗材料的背景下,研究了静电和静磁特性的尺度依赖性。首先,从适用于电场和磁场的 Hill-Mandel 均匀化条件出发,针对统计体元(SVE)给出了均匀边界条件。根据这些条件,可以得到宏观(有效)介电常数和磁导率的上下介观界限。通过计算电磁学方法,针对两种类型的复合材料通过数值模拟得到了这些界限:(i)二维(2D)随机棋盘(两相)微结构和(ii)类似的 3D 随机(两相)介质。模拟结果表明,这些界限具有依赖于尺度的趋势,趋向于代表体积元(RVE)的特性。这种从 SVE 到 RVE 的转变是通过依赖于介观尺度 δ、体积分数 v_f 和两相之间的特性对比度 k 的标度函数来描述的。通过对上述参数空间中进行的大量模拟(约 10000 次)获得的数据进行拟合,可以对该标度函数进行校准。使用该标度函数(由两相的对比度和体积分数参数化)可以在给定的微结构中估计到任意所需精度的 RVE 尺寸。