Toktamiş Hüseyin, Hama Peshawa O
University of Gaziantep, Department of Engineering Physics, 27310, Gaziantep, Turkey.
Sulaimani Polytechnic University, Electrical Power Engineering, 46001, Sulaimani, Kurdistan, Iraq.
Appl Radiat Isot. 2019 Jun;148:138-146. doi: 10.1016/j.apradiso.2019.03.036. Epub 2019 Mar 29.
Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in radiation resistant optoelectronic devices. The aim of this study is to discuss the thermoluminescence (TL) properties of silicon carbide (SiC) used in industrial applications for dosimetric purposes. Basic TL properties of these materials such as dose response, heating rate, fading effect and reproducibility have also been investigated. The largest TL peak intensity was observed at 400-1000 μm of particle size for the dosimetric peak (≈250 °C). A wide linear region between 12Gy and 2.3 kGy was observed. The good reproducibility was obtained with small standard deviation but low-temperature peaks were completely faded after 30 min storage in a dark room.
