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通过还原氧化石墨烯间隔层制备具有弱层间耦合的堆叠式二硫化钼双层膜

Fabrication of Stacked MoS Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer.

作者信息

Oh Hye Min, Kim Hyojung, Kim Hyun, Jeong Mun Seok

机构信息

Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.

Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.

出版信息

Sci Rep. 2019 Apr 11;9(1):5900. doi: 10.1038/s41598-019-42446-w.

DOI:10.1038/s41598-019-42446-w
PMID:30976032
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6459906/
Abstract

We fabricated the stacked bilayer molybdenum disulfide (MoS) by using reduced graphene oxide (rGO) as a spacer for increasing the optoelectronic properties of MoS. The rGO can decrease the interlayer coupling between the stacked bilayer MoS and retain the direct band gap property of MoS. We observed a twofold enhancement of the photoluminescence intensity of the stacked MoS bilayer. In the Raman scattering, we observed that the E and A modes of the stacked bilayer MoS with rGO were further shifted compared to monolayer MoS, which is due to the van der Waals (vdW) interaction and the strain effect between the MoS and rGO layers. The findings of this study will expand the applicability of monolayer MoS for high-performance optoelectronic devices by enhancing the optical properties using a vdW spacer.

摘要

我们通过使用还原氧化石墨烯(rGO)作为间隔层来制备堆叠双层二硫化钼(MoS),以提高MoS的光电性能。rGO可以降低堆叠双层MoS之间的层间耦合,并保留MoS的直接带隙特性。我们观察到堆叠MoS双层的光致发光强度增强了两倍。在拉曼散射中,我们观察到与单层MoS相比,含有rGO的堆叠双层MoS的E和A模式进一步发生了位移,这是由于MoS和rGO层之间的范德华(vdW)相互作用和应变效应所致。本研究的结果将通过使用vdW间隔层增强光学性能,扩大单层MoS在高性能光电器件中的适用性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/0d2e2e2f1a0b/41598_2019_42446_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/448785e6f5c1/41598_2019_42446_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/1e8c224f9a35/41598_2019_42446_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/12c73b867a73/41598_2019_42446_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/0d2e2e2f1a0b/41598_2019_42446_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/448785e6f5c1/41598_2019_42446_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/1e8c224f9a35/41598_2019_42446_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/12c73b867a73/41598_2019_42446_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0748/6459906/0d2e2e2f1a0b/41598_2019_42446_Fig4_HTML.jpg

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本文引用的文献

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Interlayer Excitons and Band Alignment in MoS/hBN/WSe van der Waals Heterostructures.MoS/hBN/WSe 范德瓦尔斯异质结中的层间激子和能带排列
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采用超高真空金属沉积技术改善 MoS2 晶体管的接触
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