Ablat Abduleziz, Kyndiah Adrica, Houin Geoffroy, Alic Tugbahan Yilmaz, Hirsch Lionel, Abbas Mamatimin
CNRS, Université Bordeaux, Laboratoire de l'Intégration du Matériau au Système (IMS), UMR 5218, ENSCBP, 16 avenue Pey Berland, 33607, Pessac Cedex, France.
School of Physical Science and Technology, Xinjiang University, Urumqi, 830046, People's Republic of China.
Sci Rep. 2019 Apr 30;9(1):6685. doi: 10.1038/s41598-019-43237-z.
High performance, air stable and solution-processed small molecule 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene (C-BTBT) based organic field-effect transistors (OFETs) with various electrode configurations were studied in detail. The contact resistance of OFET devices with Ag, Au, WO/Ag, MoO/Ag, WO/Au, and MoO/Au were compared. Reduced contact resistance and consequently improved performance were observed in OFET devices with oxide interlayers compared to the devices with bare metal electrodes. The best oxide/metal combination was determined. The possible mechanisms for enhanced electrical properties were explained by favorable morphological and electronic structure of organic/metal oxide/metal interfaces.
详细研究了基于高性能、空气稳定且可溶液加工的小分子2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩（C-BTBT）、具有各种电极配置的有机场效应晶体管（OFET）。比较了具有Ag、Au、WO/Ag、MoO/Ag、WO/Au和MoO/Au的OFET器件的接触电阻。与具有裸金属电极的器件相比，在具有氧化物夹层的OFET器件中观察到接触电阻降低，从而性能得到改善。确定了最佳的氧化物/金属组合。通过有机/金属氧化物/金属界面有利的形态和电子结构解释了电学性能增强的可能机制。
