通过线槽纳米腔提高InGaAs/GaAs量子点/纳米线异质结构的单光子发射率

Enhancement of Single-Photon Emission Rate from InGaAs/GaAs Quantum-Dot/Nanowire Heterostructure by Wire-Groove Nanocavity.

作者信息

Wei Wei, Yan Xin, Liu Jie, Shen Bing, Luo Wei, Ma Xiaofeng, Zhang Xia

机构信息

School of Mechanical and Electric Engineering, Guangzhou University, Guangzhou 510006, China.

Photonics Research Centre, Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.

出版信息

Nanomaterials (Basel). 2019 May 1;9(5):671. doi: 10.3390/nano9050671.

DOI:10.3390/nano9050671

PMID:31052364

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6566202/

Abstract

Spontaneous emission of luminescent material is strongly dependent on the surrounding electromagnetic environment. To enhance the emission rate of a single-photon emitter, we proposed a wire-groove resonant nanocavity around the single-photon emitter. An InGaAs quantum dot embedded in a GaAs nanowire was employed as a site-control single-photon emitter. The nanoscale cavity built by a wire-groove perpendicular to the quantum dot with an extremely narrow width of 10 nm exhibited an extremely small volume of 10 × 40 × 259 nm. Theoretical analysis showed that the emission rate of the quantum dot was dramatically enhanced by 617x due to the Purcell effect induced by the wire-groove cavity. A fast single-photon emitter with a rate of 50.2 GHz can be obtained that speeds up the data rate of the single-photon emitter. This ultrafast single-photon source would be of great significance in quantum information systems and networks.

摘要

发光材料的自发辐射强烈依赖于周围的电磁环境。为了提高单光子发射器的发射率，我们在单光子发射器周围提出了一种线-槽共振纳米腔。将嵌入GaAs纳米线中的InGaAs量子点用作位点控制单光子发射器。由垂直于量子点的线-槽构建的纳米级腔，其宽度极窄，仅为10 nm，体积极小，为10×40×259 nm。理论分析表明，由于线-槽腔引起的珀塞尔效应，量子点的发射率显著提高了617倍。可以获得速率为50.2 GHz的快速单光子发射器，这加快了单光子发射器的数据速率。这种超快单光子源在量子信息系统和网络中将具有重要意义。